2022-06-02
06:29 |
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2022-04-07
06:02 |
The Boron–Oxygen (BᵢOᵢ) Defect Complex Induced by Irradiation With 23 GeV Protons in p-Type Epitaxial Silicon Diodes
/ Liao, C (Hamburg U.) ; Fretwurst, E (Hamburg U.) ; Garutti, E (Hamburg U.) ; Schwandt, J (Hamburg U.) ; Moll, M (CERN) ; Himmerlich, A (CERN) ; Gurimskaya, Y (Geneva U.) ; Pintilie, I (Bucharest, Nat. Inst. Mat. Sci.) ; Nitescu, A (Bucharest, Nat. Inst. Mat. Sci.) ; Li, Z (Ludong U., Yantai ; Zaozhuang U.) et al.
In this work, the thermally stimulated current (TSC) technique has been used to investigate the properties of the radiation-induced interstitial boron and interstitial oxygen defect complex by 23-GeV (
$E_{\text {kin}}$
) protons, including activation energy, defect concentration, as well as the annealing behavior. At first isothermal annealing (at 80 °C for 0–180 min) followed by isochronal annealing (for 15 min between 100 °C and 190 °C in steps of 10 °C), studies had been performed in order to get information about the thermal stability of the interstitial boron and interstitial oxygen defect in 50-
$\Omega $
cm material after irradiation with 23-GeV protons to a fluence of
$6.91\times 10^{13}\,\,{\text {p/cm}^{2}}$
[...]
2022 - 11 p.
- Published in : IEEE Trans. Nucl. Sci. 69 (2022) 576-586
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2018-09-11
04:29 |
Proprieties of FBK UFSDs after neutron and proton irradiation up to $6*10^{15}$ neq/cm$^2$
/ Mazza, S.M. (UC, Santa Cruz, Inst. Part. Phys.) ; Estrada, E. (UC, Santa Cruz, Inst. Part. Phys.) ; Galloway, Z. (UC, Santa Cruz, Inst. Part. Phys.) ; Gee, C. (UC, Santa Cruz, Inst. Part. Phys.) ; Goto, A. (UC, Santa Cruz, Inst. Part. Phys.) ; Luce, Z. (UC, Santa Cruz, Inst. Part. Phys.) ; McKinney-Martinez, F. (UC, Santa Cruz, Inst. Part. Phys.) ; Rodriguez, R. (UC, Santa Cruz, Inst. Part. Phys.) ; Sadrozinski, H.F.W. (UC, Santa Cruz, Inst. Part. Phys.) ; Seiden, A. (UC, Santa Cruz, Inst. Part. Phys.) et al.
The properties of 60-{\mu}m thick Ultra-Fast Silicon Detectors (UFSD) detectors manufactured by Fondazione Bruno Kessler (FBK), Trento (Italy) were tested before and after irradiation with minimum ionizing particles (MIPs) from a 90Sr \b{eta}-source . This FBK production, called UFSD2, has UFSDs with gain layer made of Boron, Boron low-diffusion, Gallium, Carbonated Boron and Carbonated. [...]
arXiv:1804.05449.-
2020-04-30 - 13 p.
- Published in : JINST 15 (2020) T04008
Fulltext: PDF;
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2018-08-25
06:58 |
Charge-collection efficiency of heavily irradiated silicon diodes operated with an increased free-carrier concentration and under forward bias
/ Mandić, I (Ljubljana U. ; Stefan Inst., Ljubljana) ; Cindro, V (Ljubljana U. ; Stefan Inst., Ljubljana) ; Kramberger, G (Ljubljana U. ; Stefan Inst., Ljubljana) ; Mikuž, M (Ljubljana U. ; Stefan Inst., Ljubljana) ; Zavrtanik, M (Ljubljana U. ; Stefan Inst., Ljubljana)
The charge-collection efficiency of Si pad diodes irradiated with neutrons up to $8 \times 10^{15} \ \rm{n} \ cm^{-2}$ was measured using a $^{90}$Sr source at temperatures from -180 to -30°C. The measurements were made with diodes under forward and reverse bias. [...]
2004 - 12 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 533 (2004) 442-453
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2018-08-23
11:31 |
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2018-08-23
11:31 |
Effect of electron injection on defect reactions in irradiated silicon containing boron, carbon, and oxygen
/ Makarenko, L F (Belarus State U.) ; Lastovskii, S B (Minsk, Inst. Phys.) ; Yakushevich, H S (Minsk, Inst. Phys.) ; Moll, M (CERN) ; Pintilie, I (Bucharest, Nat. Inst. Mat. Sci.)
Comparative studies employing Deep Level Transient Spectroscopy and C-V measurements have been performed on recombination-enhanced reactions between defects of interstitial type in boron doped silicon diodes irradiated with alpha-particles. It has been shown that self-interstitial related defects which are immobile even at room temperatures can be activated by very low forward currents at liquid nitrogen temperatures. [...]
2018 - 7 p.
- Published in : J. Appl. Phys. 123 (2018) 161576
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2018-08-23
11:31 |
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2018-08-23
11:31 |
Characterization of magnetic Czochralski silicon radiation detectors
/ Pellegrini, G (Barcelona, Inst. Microelectron.) ; Rafí, J M (Barcelona, Inst. Microelectron.) ; Ullán, M (Barcelona, Inst. Microelectron.) ; Lozano, M (Barcelona, Inst. Microelectron.) ; Fleta, C (Barcelona, Inst. Microelectron.) ; Campabadal, F (Barcelona, Inst. Microelectron.)
Silicon wafers grown by the Magnetic Czochralski (MCZ) method have been processed in form of pad diodes at Instituto de Microelectrònica de Barcelona (IMB-CNM) facilities. The n-type MCZ wafers were manufactured by Okmetic OYJ and they have a nominal resistivity of $1 \rm{k} \Omega cm$. [...]
2005 - 9 p.
- Published in : Nucl. Instrum. Methods Phys. Res., A 548 (2005) 355-363
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2018-08-23
11:31 |
Silicon detectors: From radiation hard devices operating beyond LHC conditions to characterization of primary fourfold coordinated vacancy defects
/ Lazanu, I (Bucharest U.) ; Lazanu, S (Bucharest, Nat. Inst. Mat. Sci.)
The physics potential at future hadron colliders as LHC and its upgrades in energy and luminosity Super-LHC and Very-LHC respectively, as well as the requirements for detectors in the conditions of possible scenarios for radiation environments are discussed in this contribution.Silicon detectors will be used extensively in experiments at these new facilities where they will be exposed to high fluences of fast hadrons. The principal obstacle to long-time operation arises from bulk displacement damage in silicon, which acts as an irreversible process in the in the material and conduces to the increase of the leakage current of the detector, decreases the satisfactory Signal/Noise ratio, and increases the effective carrier concentration. [...]
2005 - 9 p.
- Published in : Rom. Rep. Phys.: 57 (2005) , no. 3, pp. 342-348
External link: RORPE
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2018-08-22
06:27 |
Numerical simulation of radiation damage effects in p-type and n-type FZ silicon detectors
/ Petasecca, M (Perugia U. ; INFN, Perugia) ; Moscatelli, F (Perugia U. ; INFN, Perugia ; IMM, Bologna) ; Passeri, D (Perugia U. ; INFN, Perugia) ; Pignatel, G U (Perugia U. ; INFN, Perugia)
In the framework of the CERN-RD50 Collaboration, the adoption of p-type substrates has been proposed as a suitable mean to improve the radiation hardness of silicon detectors up to fluencies of $1 \times 10^{16} \rm{n}/cm^2$. In this work two numerical simulation models will be presented for p-type and n-type silicon detectors, respectively. [...]
2006 - 6 p.
- Published in : IEEE Trans. Nucl. Sci. 53 (2006) 2971-2976
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