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RD50 Papers

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2018-09-11
04:29
Proprieties of FBK UFSDs after neutron and proton irradiation up to $6*10^{15}$ neq/cm$^2$ / Mazza, S.M. (UC, Santa Cruz, Inst. Part. Phys.) ; Estrada, E. (UC, Santa Cruz, Inst. Part. Phys.) ; Galloway, Z. (UC, Santa Cruz, Inst. Part. Phys.) ; Gee, C. (UC, Santa Cruz, Inst. Part. Phys.) ; Goto, A. (UC, Santa Cruz, Inst. Part. Phys.) ; Luce, Z. (UC, Santa Cruz, Inst. Part. Phys.) ; McKinney-Martinez, F. (UC, Santa Cruz, Inst. Part. Phys.) ; Rodriguez, R. (UC, Santa Cruz, Inst. Part. Phys.) ; Sadrozinski, H.F.-W. (UC, Santa Cruz, Inst. Part. Phys.) ; Seiden, A. (UC, Santa Cruz, Inst. Part. Phys.) et al.
The properties of 60-{\mu}m thick Ultra-Fast Silicon Detectors (UFSD) detectors manufactured by Fondazione Bruno Kessler (FBK), Trento (Italy) were tested before and after irradiation with minimum ionizing particles (MIPs) from a 90Sr \b{eta}-source . [...]
arXiv:1804.05449. - 13 p.
Preprint - Full text

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2018-08-25
06:58
Charge-collection efficiency of heavily irradiated silicon diodes operated with an increased free-carrier concentration and under forward bias / Mandić, I (Ljubljana U. ; Stefan Inst., Ljubljana) ; Cindro, V (Ljubljana U. ; Stefan Inst., Ljubljana) ; Kramberger, G (Ljubljana U. ; Stefan Inst., Ljubljana) ; Mikuž, M (Ljubljana U. ; Stefan Inst., Ljubljana) ; Zavrtanik, M (Ljubljana U. ; Stefan Inst., Ljubljana)
The charge-collection efficiency of Si pad diodes irradiated with neutrons up to $8 \times 10^{15} \ \rm{n} \ cm^{-2}$ was measured using a $^{90}$Sr source at temperatures from -180 to -30°C. The measurements were made with diodes under forward and reverse bias. [...]
2004 - 12 p. - Published in : Nucl. Instrum. Methods Phys. Res., A 533 (2004) 442-453

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2018-08-23
11:31
Reactions of interstitial carbon with impurities in silicon particle detectors / Makarenko, L F (Belarus State U.) ; Moll, M (CERN) ; Korshunov, F P (IFTTP, Minsk) ; Lastovski, S B (IFTTP, Minsk)
We present deep level transient spectroscopy (DLTS) data measured on very high resistivity $n$-type float-zone silicon detectors after irradiation with 6 MeV electrons. The carbon interstitial annealing kinetics is investigated as a function of depth in the detector structure and related to the inhomogeneous depth distribution of oxygen and carbon impurities in the devices. [...]
2007 - 6 p. - Published in : J. Appl. Phys. 101 (2007) 113537

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2018-08-23
11:31
Effect of electron injection on defect reactions in irradiated silicon containing boron, carbon, and oxygen / Makarenko, L F (Belarus State U.) ; Lastovskii, S B (Minsk, Inst. Phys.) ; Yakushevich, H S (Minsk, Inst. Phys.) ; Moll, M (CERN) ; Pintilie, I (Bucharest, Nat. Inst. Mat. Sci.)
Comparative studies employing Deep Level Transient Spectroscopy and C-V measurements have been performed on recombination-enhanced reactions between defects of interstitial type in boron doped silicon diodes irradiated with alpha-particles. It has been shown that self-interstitial related defects which are immobile even at room temperatures can be activated by very low forward currents at liquid nitrogen temperatures. [...]
2018 - 7 p. - Published in : J. Appl. Phys. 123 (2018) 161576

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2018-08-23
11:31
A comparison between irradiated magnetic Czochralski and float zone silicon detectors using the transient current technique / Bates, A G (Glasgow U. ; CERN) ; Moll, M (CERN)
Magnetic Czochralski (MCz) silicon has recently become a promising material for the development of radiation tolerant detectors for future high-luminosity HEP experiments. A thorough study of 24 GeV/$c$ proton-irradiated p$^+$-in-n Float Zone (FZ) , Diffusion Oxygenated Float Zone (DOFZ) and MCz silicon detectors has been conducted using the standard radiation damage characterization tools $IV$ and $CV$ , the Transient Current Technique (TCT) and annealing studies. [...]
2005 - 12 p. - Published in : Nucl. Instrum. Methods Phys. Res., A 555 (2005) 113-124

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2018-08-23
11:31
Characterization of magnetic Czochralski silicon radiation detectors / Pellegrini, G (Barcelona, Inst. Microelectron.) ; Rafí, J M (Barcelona, Inst. Microelectron.) ; Ullán, M (Barcelona, Inst. Microelectron.) ; Lozano, M (Barcelona, Inst. Microelectron.) ; Fleta, C (Barcelona, Inst. Microelectron.) ; Campabadal, F (Barcelona, Inst. Microelectron.)
Silicon wafers grown by the Magnetic Czochralski (MCZ) method have been processed in form of pad diodes at Instituto de Microelectrònica de Barcelona (IMB-CNM) facilities. The n-type MCZ wafers were manufactured by Okmetic OYJ and they have a nominal resistivity of $1 \rm{k} \Omega cm$. [...]
2005 - 9 p. - Published in : Nucl. Instrum. Methods Phys. Res., A 548 (2005) 355-363

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2018-08-23
11:31
Silicon detectors: From radiation hard devices operating beyond LHC conditions to characterization of primary fourfold coordinated vacancy defects / Lazanu, I (Bucharest U.) ; Lazanu, S (Bucharest, Nat. Inst. Mat. Sci.)
The physics potential at future hadron colliders as LHC and its upgrades in energy and luminosity Super-LHC and Very-LHC respectively, as well as the requirements for detectors in the conditions of possible scenarios for radiation environments are discussed in this contribution.Silicon detectors will be used extensively in experiments at these new facilities where they will be exposed to high fluences of fast hadrons. The principal obstacle to long-time operation arises from bulk displacement damage in silicon, which acts as an irreversible process in the in the material and conduces to the increase of the leakage current of the detector, decreases the satisfactory Signal/Noise ratio, and increases the effective carrier concentration. [...]
2005 - 9 p. - Published in : Rom. Rep. Phys.: 57 (2005) , no. 3, pp. 342-348 External link: RORPE

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2018-08-22
06:27
Numerical simulation of radiation damage effects in p-type and n-type FZ silicon detectors / Petasecca, M (Perugia U. ; INFN, Perugia) ; Moscatelli, F (Perugia U. ; INFN, Perugia ; IMM, Bologna) ; Passeri, D (Perugia U. ; INFN, Perugia) ; Pignatel, G U (Perugia U. ; INFN, Perugia)
In the framework of the CERN-RD50 Collaboration, the adoption of p-type substrates has been proposed as a suitable mean to improve the radiation hardness of silicon detectors up to fluencies of $1 \times 10^{16} \rm{n}/cm^2$. In this work two numerical simulation models will be presented for p-type and n-type silicon detectors, respectively. [...]
2006 - 6 p. - Published in : IEEE Trans. Nucl. Sci. 53 (2006) 2971-2976

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2018-08-22
06:27
Technology development of p-type microstrip detectors with radiation hard p-spray isolation / Pellegrini, G (Barcelona, Inst. Microelectron.) ; Fleta, C (Barcelona, Inst. Microelectron.) ; Campabadal, F (Barcelona, Inst. Microelectron.) ; Díez, S (Barcelona, Inst. Microelectron.) ; Lozano, M (Barcelona, Inst. Microelectron.) ; Rafí, J M (Barcelona, Inst. Microelectron.) ; Ullán, M (Barcelona, Inst. Microelectron.)
A technology for the fabrication of p-type microstrip silicon radiation detectors using p-spray implant isolation has been developed at CNM-IMB. The p-spray isolation has been optimized in order to withstand a gamma irradiation dose up to 50 Mrad (Si), which represents the ionization radiation dose expected in the middle region of the SCT-Atlas detector of the future Super-LHC during 10 years of operation. [...]
2006 - 6 p. - Published in : Nucl. Instrum. Methods Phys. Res., A 566 (2006) 360-365

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2018-08-22
06:27
Defect characterization in silicon particle detectors irradiated with Li ions / Scaringella, M (INFN, Florence ; U. Florence (main)) ; Menichelli, D (INFN, Florence ; U. Florence (main)) ; Candelori, A (INFN, Padua ; Padua U.) ; Rando, R (INFN, Padua ; Padua U.) ; Bruzzi, M (INFN, Florence ; U. Florence (main))
High Energy Physics experiments at future very high luminosity colliders will require ultra radiation-hard silicon detectors that can withstand fast hadron fluences up to $10^{16}$ cm$^{-2}$. In order to test the detectors radiation hardness in this fluence range, long irradiation times are required at the currently available proton irradiation facilities. [...]
2006 - 6 p. - Published in : IEEE Trans. Nucl. Sci. 53 (2006) 589-594

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