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1.
Optical properties of silicon carbide polytypes below and around bandgap / Kildemo, M
The optical properties of SiC polytypes are discussed with relation to the structure of SiC. The main part of the paper review the detailed measurements of the uniaxial dielectric function below and around the minimum band gap, using phase-modulated spectroscopic ellipsometry, polarised light transmission measurements or crossed polariser variable angle of incidence interferometry. [...]
2004 - Published in : Thin Solid Films 455-456 (2004) 187-95
In : 3rd International Conference on Spectroscopic Ellipsometry, Vienna, Austria, 6 - 11 Jul 2003, pp.187-95
2.
Optical properties of silicon carbide polytypes / Kildemo, Morten
CERN-OPEN-2003-047.
- 2003. - 2 p.
Access to fulltext document - Access to fulltext document - CERN library copies
3.
Lattice location of impurities in silicon Carbide / Granadeiro Costa, Angelo Rafael
The presence and behaviour of transition metals (TMs) in SiC has been a concern since the start of producing device-grade wafers of this wide band gap semiconductor [...]
CERN-THESIS-2018-072 - 157 p.

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4.
Book cover Advancing silicon carbide electronics technology I / Zekentes, Konstantinos
The rapidly advancing Silicon Carbide technology has demonstrated a great potential in high-power low-loss semiconductor electronics [...]
Millersville, PA : Materials Research Forum, 2018. - 249 p. (Materials research foundations ; 37)

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5.
Book cover Characterization of wide bandgap power semiconductor devices / Wang, Fei
This book is an authoritative overview of Wide Bandgap (WBG) device characterization providing essential tools to assist the reader in performing both static and dynamic characterization of WBG devices, particularly those based on using silicon carbide (SiC) and gallium nitride (GaN) power semicondu [...]
Stevenage : Institution of Engineering & Technology, 2018. - 348 p.

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6.
Polytypic transformations in SiC : An ab initio study / Kackell, P ; Furthmüller, J ; Bechstedt, F
1999 - Published in : Phys. Rev. B 60 (1999) 13261
7.
Band-gap change of carbon nanotubes : Effect of small uniaxial and torsional strain / Yang, L ; Anantram, M P ; Lu, J P
1999 - Published in : Phys. Rev. B 60 (1999) 13874
8.
Book cover Fundamentals of silicon carbide technology : growth, characterization, devices and applications / Kimoto, Tsunenobu
A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applicationsBased on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) [...]
Hoboken, NJ : Wiley-IEEE Press, 2014. - 555 p.

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9.
Book cover Semiconductors , pt.C : Technology of Si, Ge and SiC. / Schulz, M (ed.) ; Weiss, H (ed.)
Berlin : Springer, 1984. - 651 p. (Landolt-Börnstein. New series. Group 3 Crystal and solid state physics ; III/17-C)

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10. Recommendations of the Finance Committee to Council as to the Financing of the 1965 Supplementary Programme
Recommandations du Comité des Finances au Conseil au sujet du financement du programme supplémentaire pour 1965
CERN/0572
28th Session of Council ; 1964
English: PDF
French: PDF

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