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EP-R&D Programme on Technologies for Future Experiments (EP RDET)

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2024-07-02
07:03
Towards a new generation of Monolithic Active Pixel Sensors / Chauhan, Ankur (DESY) ; Viera, Manuel Del Rio (DESY ; Bonn U.) ; Eckstein, Doris (DESY) ; Feindt, Finn (DESY) ; Gregor, Ingrid-Maria (DESY) ; Hansen, Karsten (DESY) ; Huth, Lennart (DESY) ; Mendes, Larissa (DESY ; U. Campinas) ; Mulyanto, Budi (DESY) ; Rastorguev, Daniil (DESY ; Wuppertal U.) et al.
A new generation of Monolithic Active Pixel Sensors (MAPS), produced in a 65 nm CMOS imaging process, promises higher densities of on-chip circuits and, for a given pixel size, more sophisticated in-pixel logic compared to larger feature size processes. MAPS are a cost-effective alternative to hybrid pixel sensors since flip-chip bonding is not required. [...]
arXiv:2210.09810.- 2023 - 3 p. - Published in : Nucl. Instrum. Methods Phys. Res., A 1047 (2023) 167821 Fulltext: PDF;
In : 15th Pisa Meeting on Advanced Detectors, La Biodola - Isola D'elba, Italy, 22 - 28 May 2022, pp.167821

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2024-07-02
07:03
Digital cells radiation hardness study of TPSCo 65 nm CIS technology by designing a ring oscillator / Barbero, M (Marseille, CPPM) ; Barrillon, P (Marseille, CPPM) ; Fougeron, D (Marseille, CPPM) ; Habib, A (Marseille, CPPM) ; Pangaud, P (Marseille, CPPM)
The CPPM group has long been designing and testing HV-CMOS blocks to complete monolithic chips in various technologies (TJ180, LF150, AMS) in the framework of several collaborations. In 2020, we participated in the MLR1 run in TowerJazz 65 nm technology through CERN’s EP-R&D; WP1.2, by designing a ring oscillator test chip. [...]
2023 - 8 p. - Published in : JINST 18 (2023) C02063
In : Topical Workshop on Electronics for Particle Physics 2022 (TWEPP 2022), Bergen, Norway, 19 - 23 Sep 2022, pp.C02063

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2024-07-02
07:03
Single-event effects in SOI technologies and devices / Musseau, O (Saclay)
Due to their limited sensitive volumes for charge collection, silicon on insulator (SOI) technologies are good candidates for any microelectronic device operating in a space environment. While being insensitive to latchup phenomena, SOI devices may experience single-event effects (SEE's). [...]
1996 - 11 p. - Published in : IEEE Trans. Nucl. Sci. 43 (1996) 603-613

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2024-07-02
07:03
Design of a Radiation-Tolerant Bandgap Voltage Reference for HEP applications / Traversi, Gianluca (Bergamo U., Ingengneria Dept. ; INFN, Pavia) ; Gaioni, Luigi (Bergamo U., Ingengneria Dept. ; INFN, Pavia) ; Ballabriga, Rafael (CERN) ; Ceresa, Davide (CERN) ; Michelis, Stefano (CERN)
This work discusses the design of a bandgap voltage reference circuit to be operated in harsh radiation environments. [...]
2022. - 3 p.

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2024-07-02
07:03
Test bench of a 100 Gbps radiation hardened link for future particle accelerators / Martina, F (CERN) ; Baron, S (CERN) ; Moreira, P (CERN) ; Baszczyk, M (CERN) ; Biereigel, S (CERN) ; Klekotko, A (CERN ; Leuven U.) ; Kulis, S (CERN)
Pioneering physics experiments require increasingly faster data transfers and high-throughput electronics, which drives the research towards a new class of serialisers and optical links. In this framework, the DART28, a 100 Gbps radiation tolerant serialiser and driver, has been designed in 28 nm CMOS technology, submitted in April and delivered in August 2023. [...]
2024 - 7 p. - Published in : JINST 19 (2024) C02072 Fulltext: PDF;
In : Topical Workshop on Electronics for Particle Physics 2023 (TWEPP 2023), Geremeas, Sardinia, Italy, 1 - 6 Oct 2023, pp.C02072

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2024-07-02
07:03
Dual use driver for high speed links transmitters in the future high energy physics experiments / Baszczyk, M (CERN) ; Biereigel, S (CERN) ; Klekotko, A (CERN ; Leuven U.) ; Kulis, S (CERN) ; Martina, F (CERN) ; Moreira, P (CERN)
The paper presents the Dual Use Driver (DUDE) for highspeed links, a circuit designed for the Demonstrator ASIC for Radiation-Tolerant Transmitter in 28 nm CMOS (DART28) developed under the EP-R&D; programme on technologies for future high energyphysics experiments. The driver operates at 25.6 Gbps and it allows driving both 100 Ωtransmission lines and optical Ring Modulators (RMs) integrated in a photonics integrated circuit(PIC). [...]
2024 - 7 p. - Published in : JINST 19 (2024) C03013 Fulltext: PDF;
In : Topical Workshop on Electronics for Particle Physics 2023 (TWEPP 2023), Geremeas, Sardinia, Italy, 1 - 6 Oct 2023, pp.C03013

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2024-07-02
07:03
Thermal annealing in silicon photonics ring modulators / Lalović, M (Belgrade, Inst. Phys. ; CERN) ; Detraz, S (CERN) ; Marcon, L (CERN) ; Olanterä, L (CERN) ; Prousalidi, T (CERN ; Natl. Tech. U., Athens) ; Sandven, U (CERN) ; Scarcella, C (CERN) ; Sigaud, C (CERN) ; Soós, C (CERN) ; Troska, J (CERN)
Silicon photonics technology promises significant improvements for fibre optic links of future upgrades of HEP experiments. Such systems will require high levels of radiation tolerance and silicon photonics modulators have been shown to be very robust when exposed to high levels of radiation under certain conditions. [...]
2023 - 7 p. - Published in : JINST 18 (2023) C03028
In : Topical Workshop on Electronics for Particle Physics 2022 (TWEPP 2022), Bergen, Norway, 19 - 23 Sep 2022, pp.C03028

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2024-07-02
04:46
Pixel detector hybridisation and integration with anisotropic conductive adhesives / Volker, Alexander (CERN) ; Schmidt, Janis Viktor (CERN) ; Dannheim, Dominik (CERN) ; Svihra, Peter (CERN) ; Pinto, Mateus Vicente Barreto (Geneva U.) ; de Oliveira, Rui (CERN) ; Braach, Justus (CERN) ; Yang, Xiao (CERN) ; Ruat, Marie (ESRF, Grenoble) ; Magalhaes, Débora (ESRF, Grenoble ; DESY) et al.
A reliable and cost-effective interconnect technology is required for the development of hybrid pixel detectors. The interconnect technology needs to be adapted for the pitch and die sizes of the respective applications. [...]
arXiv:2312.09883.- 2024-05-13 - 13 p. - Published in : JINST 19 (2024) C05024 Fulltext: 2312.09883 - PDF; Publication - PDF;
In : 16th Topical Seminar on Innovative Particle and Radiation Detectors, Siena, Italy, 25 - 29 Sep 2023, pp.C05024

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2024-07-02
04:38
Observation of strong wavelength-shifting in the argon-tetrafluoromethane system / Amedo, P. (Santiago de Compostela U., IGFAE) ; González-Día, D. (Santiago de Compostela U., IGFAE) ; Brunbauer, F.M. (CERN) ; Fernández-Posada, D.J. (Santiago de Compostela U., IGFAE) ; Oliveri, E. (CERN) ; Ropelewski, L. (CERN)
We report the scintillation spectra of Ar-CF$_4$ mixtures in the range 210-800~nm, obtained under X-ray irradiation for various pressures (1-5~bar) and concentrations (0-100%). [...]
arXiv:2306.09919. - 27 p.
Fulltext

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2024-06-12
06:19
Effects of High Fluence Particle Irradiation on Germanium-on-Silicon Photodiodes / Olanterä, Lauri (CERN) ; Scarcella, Carmelo (CERN) ; Lalović, Milana (CERN ; Belgrade U.) ; Détraz, Stéphane (CERN) ; Pandey, Awanish (CERN) ; Prousalidi, Theoni (CERN ; Natl. Tech. U., Athens) ; Sandven, Ulrik (CERN) ; Sigaud, Christophe (CERN) ; Soós, Csaba (CERN) ; Troska, Jan (CERN)
Waveguide-Integrated Germanium-on-Silicon (Ge-on-Si) photodiodes are integral components in silicon photonics and understanding their radiation tolerance is important for applications that intend to use silicon photonics in harsh radiation environments. Here we report the results of high fluence particle irradiation tests on Ge-on-Si photodiodes. [...]
2024 - 8 p. - Published in : IEEE Trans. Nucl. Sci. 71 (2024) 728-735

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