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RD50 Conference Proceedings

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2020-03-19
07:03
Silicon detectors for the LHC Phase-II upgrade and beyond RD50 Status report / Szumlak, T (AGH-UST, Cracow) /RD50
The inner tracking layers of all LHC experiments were designed and developed to cope with the environment of the present Large Hadron Collider (LHC). At the LHC Phase-II Upgrade foreseen for 2026, the particle densities and radiation levels will increase by roughly an order of magnitude compared to the present LHC conditions. [...]
Elsevier, 2020 - 4 p. - Published in : Nucl. Instrum. Methods Phys. Res., A 958 (2020) 162187
In : 15th Vienna Conference on Instrumentation, Vienna, Austria, 18 - 22 Feb 2019, pp.162187

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2019-10-30
04:20
Silicon detectors for the LHC Phase-II upgrade and beyond. RD50 status report / Mandurrino, Marco (CERN)
It is foreseen to significantly increase the luminosity of the LHC in order to harvest the maximum physics potential. [...]
arXiv:1910.06045.
- 2019. - 8 p.
Fulltext

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2019-10-29
06:54
Radiation damage modeling: TCAD simulation / Jain, Geetika (Delhi U.) /RD50 Collaboration
The exceptional performance of the silicon sensors in the radiation environment has led to their extensive application in high energy physics. Even so, the future experiments foresee these sensors to be exposed to higher radiation levels. [...]
SISSA, 2019 - 12 p. - Published in : PoS VERTEX2018 (2019) 017 Fulltext from publisher: PDF;
In : The 27th International Workshop on Vertex Detectors, Chennai, India, 21 - 26 Oct 2018, pp.017

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2018-08-25
06:58
Recent developments of the CERN RD50 collaboration / Menichelli, David (U. Florence (main) ; INFN, Florence) /CERN RD50
The objective of the RD50 collaboration is to develop radiation hard semiconductor detectors for very high luminosity colliders, particularly to face the requirements of the possible upgrade of the large hadron collider (LHC) at CERN. Some of the RD50 most recent results about silicon detectors are reported in this paper, with special reference to: (i) the progresses in the characterization of lattice defects responsible for carrier trapping; (ii) charge collection efficiency of n-in-p microstrip detectors, irradiated with neutrons, as measured with different readout electronics; (iii) charge collection efficiency of single-type column 3D detectors, after proton and neutron irradiations, including position-sensitive measurement; (iv) simulations of irradiated double-sided and full-3D detectors, as well as the state of their production process..
2008 - 5 p. - Published in : Nucl. Instrum. Methods Phys. Res., A 596 (2008) 48-52

In : 8th International Conference on Large Scale Applications and Radiation Hardness of Semiconductor Detectors, Florence, Italy, 27 - 29 Jun 2007, pp.48-52

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2018-08-25
06:58
Development of semiconductor detectors for very harsh radiation environments in high energy physics applications / Casse, G (Liverpool U.) /RD50
The Large Hadron Collider (LHC) at CERN has been designed to achieve the unprecedented luminosity of $10^{34} \rm{cm}^{-2} s^{-1}$. As a consequence, the silicon detectors close to the interaction region will receive severe doses of hadron irradiation. [...]
2004 - 15 p. - Published in : , pp. 129-143
In : 42nd INFN ELOISATRON Project Workshop : Innovative Detectors for Supercolliders "Ettore Majorana", Erice, Italy, 28 Sep - 4 Oct 2003, pp.129-143

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2018-08-25
06:58
Performance of irradiated bulk SiC detectors / Cunningham, W (Glasgow U.) ; Melone, J (Glasgow U.) ; Horn, M (Glasgow U.) ; Kazukauskas, V (Vilnius U.) ; Roy, P (Glasgow U.) ; Doherty, F (Glasgow U.) ; Glaser, M (CERN) ; Vaitkus, J (Vilnius U.) ; Rahman, M (Glasgow U.) /CERN RD50
Silicon carbide (SiC) is a wide bandgap material with many excellent properties for future use as a detector medium. We present here the performance of irradiated planar detector diodes made from 100-$\mu \rm{m}$-thick semi-insulating SiC from Cree. [...]
2003 - 5 p. - Published in : Nucl. Instrum. Methods Phys. Res., A 509 (2003) 127-131

In : 4th International Workshop on Radiation Imaging Detectors, Amsterdam, The Netherlands, 8 - 12 Sep 2002, pp.127-131

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2018-08-24
06:19
Measurements and simulations of charge collection efficiency of p$^+$/n junction SiC detectors / Moscatelli, F (IMM, Bologna ; U. Perugia (main) ; INFN, Perugia) ; Scorzoni, A (U. Perugia (main) ; INFN, Perugia ; IMM, Bologna) ; Poggi, A (Perugia U.) ; Bruzzi, M (Florence U.) ; Lagomarsino, S (Florence U.) ; Mersi, S (Florence U.) ; Sciortino, Silvio (Florence U.) ; Nipoti, R (IMM, Bologna)
Due to its excellent electrical and physical properties, silicon carbide can represent a good alternative to Si in applications like the inner tracking detectors of particle physics experiments (RD50, LHCC 2002–2003, 15 February 2002, CERN, Ginevra). In this work p$^+$/n SiC diodes realised on a medium-doped ($1 \times 10^{15} \rm{cm}^{−3}$), 40 $\mu \rm{m}$ thick epitaxial layer are exploited as detectors and measurements of their charge collection properties under $\beta$ particle radiation from a $^{90}$Sr source are presented. [...]
2005 - 4 p. - Published in : Nucl. Instrum. Methods Phys. Res., A 546 (2005) 218-221

In : 6th International Workshop on Radiation Imaging Detectors, Glasgow, UK, 25-29 Jul 2004, pp.218-221

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2018-08-24
06:19
Measurement of trapping time constants in proton-irradiated silicon pad detectors / Krasel, O (Dortmund U.) ; Gossling, C (Dortmund U.) ; Klingenberg, R (Dortmund U.) ; Rajek, S (Dortmund U.) ; Wunstorf, R (Dortmund U.)
Silicon pad-detectors fabricated from oxygenated silicon were irradiated with 24-GeV/c protons with fluences between $2 \cdot 10^{13} \ n_{\rm{eq}}/\rm{cm}^2$ and $9 \cdot 10^{14} \ n_{\rm{eq}}/\rm{cm}^2$. The transient current technique was used to measure the trapping probability for holes and electrons. [...]
2004 - 8 p. - Published in : IEEE Trans. Nucl. Sci. 51 (2004) 3055-3062
In : 50th IEEE 2003 Nuclear Science Symposium, Medical Imaging Conference, 13th International Workshop on Room Temperature Semiconductor Detectors and Symposium on Nuclear Power Systems, Portland, OR, USA, 19 - 25 Oct 2003, pp.3055-3062

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2018-08-24
06:19
Lithium ion irradiation effects on epitaxial silicon detectors / Candelori, A (INFN, Padua ; Padua U.) ; Bisello, D (INFN, Padua ; Padua U.) ; Rando, R (INFN, Padua ; Padua U.) ; Schramm, A (Hamburg U., Inst. Exp. Phys. II) ; Contarato, D (Hamburg U., Inst. Exp. Phys. II) ; Fretwurst, E (Hamburg U., Inst. Exp. Phys. II) ; Lindstrom, G (Hamburg U., Inst. Exp. Phys. II) ; Wyss, J (Cassino U. ; INFN, Pisa)
Diodes manufactured on a thin and highly doped epitaxial silicon layer grown on a Czochralski silicon substrate have been irradiated by high energy lithium ions in order to investigate the effects of high bulk damage levels. This information is useful for possible developments of pixel detectors in future very high luminosity colliders because these new devices present superior radiation hardness than nowadays silicon detectors. [...]
2004 - 7 p. - Published in : IEEE Trans. Nucl. Sci. 51 (2004) 1766-1772
In : 13th IEEE-NPSS Real Time Conference 2003, Montreal, Canada, 18 - 23 May 2003, pp.1766-1772

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2018-08-24
06:19
Radiation hardness of different silicon materials after high-energy electron irradiation / Dittongo, S (Trieste U. ; INFN, Trieste) ; Bosisio, L (Trieste U. ; INFN, Trieste) ; Ciacchi, M (Trieste U.) ; Contarato, D (Hamburg U., Inst. Exp. Phys. II) ; D'Auria, G (Sincrotrone Trieste) ; Fretwurst, E (Hamburg U., Inst. Exp. Phys. II) ; Lindstrom, G (Hamburg U., Inst. Exp. Phys. II)
The radiation hardness of diodes fabricated on standard and diffusion-oxygenated float-zone, Czochralski and epitaxial silicon substrates has been compared after irradiation with 900 MeV electrons up to a fluence of $2.1 \times 10^{15} \ \rm{e} / cm^2$. The variation of the effective dopant concentration, the current related damage constant $\alpha$ and their annealing behavior, as well as the charge collection efficiency of the irradiated devices have been investigated..
2004 - 7 p. - Published in : Nucl. Instrum. Methods Phys. Res., A 530 (2004) 110-116

In : 6th International Conference on Large Scale Applications and Radiation Hardness of Semiconductor Detectors, Florence, Italy, 29 Sep - 1 Oct 2003, pp.110-116

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