Geneva University: Recent developments on 3D sensors

GENEVA UNIVERSITY
Ecole de physique
Département de physique nucléaire et corspusculaire
24, quai Ernest-Ansermet
1211 Genève 4
Tél.: (022) 379 62 73
Fax: (022) 379 69 92

Wednesday  2 November  2011
SEMINAIRE DE PHYSIQUE CORPUSCULAIRE
at 17.00 hrs – Stückelberg Auditorium

“Recent developments on 3D sensors”
Dr Cinzia Da Via,
University of Manchester, UK

3D are a novel kind of silicon radiation sensors where electrodes are micromachined inside the semiconductor substrate rather than being processed on its surfaces. This is possible by using Deep Reaction Io Etching, the same technique used to Fabricate MEMS (Micro-Electro-Mechanical Systems). Properties of this innovative design include extreme radiation hardness and high speed. Several Industrial partners and Academic institutes successfully joined together to accelerate the transition between the 3D R&D phase and Industrialization. This seminar will discuss the state of the art of 3D, its applications and potentials for the future. 3D will be used in the first ATLAS upgrade in 2013.

Information : http://dpnc.unige.ch/seminaire/annonce.html
Organizer : Mrs Gabriella Pasztor

by Geneva University