Université de Genève - Silicon photomultiplier : features and applications

Université de Genève
École de physique
Département de physique nucléaire et corspusculaire
24, quai Ernest-Ansermet
1211 Genève 4
Tél.: (022) 379 62 73
Fax: (022) 379 69 92


Mercredi 7 mars 2012

11h15 - Science II, Auditoire 1S081, 30, quai Ernest-Ansermet, 1211 Genève 4


  University of Naples, Federico II


Silicon photomultipliers were developed about ten years ago and their use, unlike traditional photomultiplier tubes, is increasing more and more. They are an evolution of the avalanche photodiode working in Geiger mode regime. Hundreds of such diodes are connected in parallel, allowing single photon response, high detection efficiency, high gain at low bias voltage and very good timing performance. In spite of their Geiger regime, they can be considered linear devices, until the number of photons impinging is smaller than the number of cells. The main drawbacks are a high dark rate and temperature dependence of some parameters.

The large success they are enjoying is confirmed by the multiplication of firms that are now producing such devices and the many typologies of SiPM available.

In this talk I will discuss the main properties of silicon photomultipliers. A short description of the devices available on the market and to front-end electronics will be given too. A selected number of applications, in the particle physics context and other areas, will be discussed.

INFORMATION : http://dpnc.unige.ch/seminaire/annonce.html
ORGANISATEUR: Mrs Gabriella Pasztor

par Université de Genève