Université de Genève | Séminaire de physique corpusculaire | 24 April

Ultra low-noise amplifiers for silicon and diamond detectors, by Dr Roberto Cardarelli, University Tor Vergata.

Wednesday 24 April 2013 at 11:15 a.m.
Science III, Auditoire 1S081
30, quai Ernest-Ansermet, 1211 Genève 4

Abstract: Thanks to the SiGe heterojunction, in the last years the BJT transistor technology has been experiencing a great development for high frequency and low-noise operation. The performance of an ultra-low-noise preamplifier (500 e- RMS) with low frequency (100 MHz BW) will be shown. This amplifier, given the low dependence of the noise from the source capacitance (up to 1 nF), the very fast rise time (up to 100 ps) and the 50 Ohm input impedance, is particularly promising for silicon, diamond and high rate gas detectors.

More information here.