Planar Pixel Sensors for the ATLAS Upgrade: Beam Tests results
- Weingarten, J. et al
- arXiv:1204.1266
 | Example of LVL1 distribution. |
 | noimgRelevant quantities of the n-in-p samples. |
 | Left: View of a corner of an n-in-p sensor of the CiS production with 15 guard rings. Right: View of a corner of an n-in-p sensor of the CiS production,with 19 guard rings. |
 | Left: View of a corner of an n-in-p sensor of the CiS production with 15 guard rings. Right: View of a corner of an n-in-p sensor of the CiS production,with 19 guard rings. |
 | Schematics of a CiS n-in-p pixel assembly. The potential of the different parts is given. The BCB layer is indicated in orange. |
 | Relative cluster size abundance as a function of bias voltage for irradiated MPP4 and MPP5 devices. MPP3 (non-irradiated) are added for comparison. Particles were impinging at normal incidence. Errors on fractions are negligible and so not visible in the plot. |
 | Charge collection within a single pixel by track position for MPP3 at $V_{\mathrm{bias}}$ of 150\,V |
 | Charge collection within a single pixel by track position for MPP5 at $V_{\mathrm{bias}}=500$\,V |
 | Charge collected in a cluster: most probable value of the charge distribution fitted to a Landau function convoluted with a gaussian as a function of the bias voltage. See text for the discussion on the assigned systematic uncertainty. The threshold value is also depicted as a dashed line. |
 | Charge sharing map for MPP3 detector, biased at 150\,V (top) and for MPP4 detector, biased at 700\,V. |
 | Charge sharing map for MPP3 detector, biased at 150\,V (top) and for MPP4 detector, biased at 700\,V. |
 | Residual distribution for irradiated sample MPP5 at V$_{bias}$ of 500\,V. Left: long pixel projection; right: short pixel projection. |
 | Residual distribution for irradiated sample MPP5 at V$_{bias}$ of 500\,V. Left: long pixel projection; right: short pixel projection. |
 | Residual distribution for non-irradiated MPP3 biased at 150 Volts. Left: long pixel projection; right: short pixel projection. |
 | Residual distribution for non-irradiated MPP3 biased at 150 Volts. Left: long pixel projection; right: short pixel projection. |
 | Residual distribution for irradiated sample MPP5 biased at V$_{bias}$ of 500\,V, for two-hit clusters. Left: long pixel projection; right: short pixel projection. |
 | Residual distribution for irradiated sample MPP5 biased at V$_{bias}$ of 500\,V, for two-hit clusters. Left: long pixel projection; right: short pixel projection. |
 | Residual distribution for unirradiated sample MPP3 at V$_{bias}$ of 150\,V, for two-hit clusters. Analysis restricted to clusters with 2 pixels. Left: long pixel projection; right: short pixel projection. |
 | Residual distribution for unirradiated sample MPP3 at V$_{bias}$ of 150\,V, for two-hit clusters. Analysis restricted to clusters with 2 pixels. Left: long pixel projection; right: short pixel projection. |
 | Pixel cell design details for KEK1 (top) and KEK2 (bottom) samples. |
 | Pixel cell design details for KEK1 (top) and KEK2 (bottom) samples. |
 | Collected charge as a function of the bias voltage for HPK samples; particles were impinging at diffent angles too. A threshold of 3200\,e is indicated. |
 | Collected charge as a function of the bias voltage for HPK samples; particles were impinging at diffent angles too. A threshold of 3200\,e is indicated. |
 | Charge sharing map for KEK1 (top) and KEK2 (bottom) at V$_{bias}$ of 200\,V. |
 | Fraction of cluster sizes as function of the bias voltage for HPK samples; particles were impinging at diffent angles too. |
 | Charge sharing map for KEK1 (top) and KEK2 (bottom) at V$_{bias}$ of 200\,V. |
 | Cluster position residual distribution for non-irradiated sample KEK1 at V$_{bias}$ of 200\,V at normal incidence. Left: long pixel projection; right: short pixel projection. |
 | Cluster position residual distribution for non-irradiated sample KEK1 at V$_{bias}$ of 200\,V at normal incidence. Left: long pixel projection; right: short pixel projection. |
 | Residual distribution for non-irradiated KEK1 biased at 200 Volts clusters with 2 pixels. Left: long pixel projection; right: short pixel projection. |
 | Residual distribution for non-irradiated KEK1 biased at 200 Volts clusters with 2 pixels. Left: long pixel projection; right: short pixel projection. |
 | Collected charge as a function of bias voltage for n-in-n samples irradiated to different fluences (see details in the text). A threshold of 3200~e is indicated. |
 | Charge collection within a pixel. Top: DO9 at V$_{bias}$=1200\,V. Bottom: DO10 at V$_{bias}$=1000\,V. |
 | Charge collection within a pixel. Top: DO9 at V$_{bias}$=1200\,V. Bottom: DO10 at V$_{bias}$=1000\,V. |
 | Top: Design of the sample of the region shown in the plot below. Bottom: Charge sharing probability for DO9 at V$_{bias}$=1200V. Note the reduced charge sharing in the bias grid region on the right-hand side of the central pixel. |
 | Top: Design of the sample of the region shown in the plot below. Bottom: Charge sharing probability for DO9 at V$_{bias}$=1200V. Note the reduced charge sharing in the bias grid region on the right-hand side of the central pixel. |
 | Fractions of 1-, 2-, and 3-hit clusters as function of bias voltage for irradiated n-in-n samples; see text for details. Error bars are too small to be visible. |
 | Residual distributions for 2-pixel clusters only. Shown are distributions samples irradiated to $5\times 10^{15}$\,n$_{\rm eq}$/cm$^2$ (left: DO9, bias voltage 1000\,V) and $2\times 10^{16}$\,n$_{\rm eq}$/cm$^2$ (right, DO10, bias voltage 1200\,V), respectively. |
 | Residual distributions for 2-pixel clusters only. Shown are distributions samples irradiated to $5\times 10^{15}$\,n$_{\rm eq}$/cm$^2$ (left: DO9, bias voltage 1000\,V) and $2\times 10^{16}$\,n$_{\rm eq}$/cm$^2$ (right, DO10, bias voltage 1200\,V), respectively. |
 | Residual distributions in the short pixel direction for an unirradiated sample (DO6, left) and a sample irradiated to $2\times 10^{16}$\,n$_{\rm eq}$/cm$^2$ operated at a bias voltage of 1000\,V (DO10, right). No deterioration of the spatial distribution with irradiation is visible. |
 | Residual distributions in the short pixel direction for an unirradiated sample (DO6, left) and a sample irradiated to $2\times 10^{16}$\,n$_{\rm eq}$/cm$^2$ operated at a bias voltage of 1000\,V (DO10, right). No deterioration of the spatial distribution with irradiation is visible. |
 | Test structures for slim edge studies. Top: DO6, the active pixel region overlaps the guard rings by 210\,$\mu$m. Bottom: DO3, groups of 10 pixels shifted towards the edge of the sensor in steps of 25\,$\mu$m. |
 | Test structures for slim edge studies. Top: DO6, the active pixel region overlaps the guard rings by 210\,$\mu$m. Bottom: DO3, groups of 10 pixels shifted towards the edge of the sensor in steps of 25\,$\mu$m. |
 | Charge collection in the pixels shifted underneath the guard rings. |
 | Charge collection in the pixels shifted underneath the guard rings. |