CERN Accelerating science

ATLAS Note
Report number	arXiv:1304.4424 ; ATL-INDET-PROC-2012-019
Title	Characterization of the FE-I4B pixel readout chip production run for the ATLAS Insertable B-layer upgrade
Author(s)	Backhaus, M. (Bonn U.)
Collaboration	for the ATLAS collaboration
Publication	2013
Imprint	01 Nov 2012
Number of pages	15
In:	JINST 8 (2013) C03013
In:	Topical Workshop on Electronics for Particle Physics, Oxford, UK, 17 - 21 Sep 2012, pp.C03013
DOI	10.1088/1748-0221/8/03/C03013
Subject category	Detectors and Experimental Techniques
Accelerator/Facility, Experiment	CERN LHC ; ATLAS
Free keywords	Insertable B-Layer ; ATLAS Upgrade ; Readout electronics ; Radiation hard detectors
Abstract	The Insertable B-layer (IBL) is a fourth pixel layer that will be added inside the existing ATLAS pixel detector during the long LHC shutdown of 2013 and 2014. The new four layer pixel system will ensure excellent tracking, vertexing and b-tagging performance in the high luminosity pile-up conditions projected for the next LHC run. The peak luminosity is expected to reach 3 x 10^34 cm^-2 s^-1 with an integrated luminosity over the IBL lifetime of 300 fb^-1 corresponding to a design lifetime fluence of 5 x 10^15 n_eq cm^-2 and ionizing dose of 250 Mrad including safety factors. The production front-end electronics FE-I4B for the IBL has been fabricated at the end of 2011 and has been extensively characterized on diced ICs as well as at the wafer level. The production tests at the wafer level were performed during 2012. Selected results of the diced IC characterization are presented, including measurements of the on-chip voltage regulators. The IBL powering scheme, which was chosen based on these results, is described. Preliminary wafer to wafer distributions as well as yield calculations are given.
Copyright/License	Preprint: (License: CC-BY-4.0)

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