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Wafer cross-section (left) and pixel layout (right) of FBK 1E, 2E and 4E sensors.

Wafer cross-section (left) and pixel layout (right) of SINTEF 3D 2E and 4E sensors.

Support wafer removal to get Active edge 3D sensors using new WaferBOND$\copyright$ process from Brewer Science

I-V measurement of FBK 3D pixel sensors before irradiation at 20$^{\circ}$C from ATLAS08 batch (left) and IBL ATLAS11 and ATLAS12 batches (right).

I-V measurements of SINTEF 2E sensors before and after support wafer removal (left), Leakage current of SINTEF 3D sensors after $7\times10^{14}$ - $3.5\times10^{15}$ $\rm{n_{eq}/ cm^{2}}$ proton irradiation (right).

I-V measurements of SINTEF 2E sensors before and after support wafer removal (left), Leakage current of SINTEF 3D sensors after $7\times10^{14}$ - $3.5\times10^{15}$ $\rm{n_{eq}/ cm^{2}}$ proton irradiation (right).

IV curves of Sintef 3D sensors with support wafer (left) and after support wafer removal for 2E sensors (middle) and 4E sensors (right)

I-V measurements of FBK 3D ATLAS08 sensors (left) before/after $7\times10^{14}$ - $3.5\times10^{15}$ $\rm{n_{eq}/ cm^{2}}$ proton irradiation, and FBK ATLAS10 1E diodes (right) before/after 2.2 Mrad Co$^{60}$ gamma irradiation.

Noise of: FBK 3D ATLAS08 sensors simulation results (left), pre-irradiation and post-irradiation ATLAS08 (middle), and SINTEF 3D sensors (right) before and after 3.5x10$^{15}$ $\rm{n_{eq}/ cm^{2}}$ irradiation

Noise before and after $7\times10^{14}$ - $3.5\times10^{15}$ $\rm{n_{eq}/ cm^{2}}$ irradiation: for ATLAS08 sensors (left) and SINTEF 3D sensors (right).

Charge collected from source for Sintef 2E before irradiation (left), Sintef 4E before (middle) and (right) after 7x10$^{14}$ $\rm{n_{eq}/ cm^{2}}$ irradiation

Hit efficiency of SINTEF 3D 4E sensor at 0 degree (left) and at 20 degrees (right) measured before irradiation in beam tests.

Hit efficiency of SINTEF 2E sensor after $7\times10^{14}$ $\rm{n_{eq}/ cm^{2}}$ proton irradiation: at 0 degrees (left) and at 20 degrees (right)

Cell efficiency of (left) Sintef 3D 2E sensors at 0 degree, 4E sensors at 0 degree (middle) and 4E at 20 degrees (right)

Tracking efficiency of FBK and Sintef 3D sensors as a function of (a) Vthr ADC (left) and (b) sensor reverse bias (right)

Charge vs. Bias using Sr$^{90}$ source (left) and Hit Efficiency vs. Bias measured in beam tests (right) of FBK and SINTEF 3D sensors before and after irradiation.

Cell efficiency of Sintef 3D 2E sensors after irradiation (left) at 0 degrees and 20 degrees, residual of Sintef 2E sensor before (middle) and after irradiation(right)

Y residual of SINTEF 2E sensor before irradiation (left) and after $7\times10^{14}$ $\rm{n_{eq}/ cm^{2}}$ proton irradiation (right).

Various test structures from FBK ATLAS10 batch (left), low and high frequency CV of MOS capacitor (middle), and measured density of interface traps (right).