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| Experiments at CERN | |
| Title | Emission channeling with short-lived isotopes : lattice location of impurities in semiconductors and oxides |
| Experiment | IS580 |
| Greybook | See IS580 experiment |
| Approved | 27 November 2013 |
| Status | Completed on 07 May 2020 |
| Collaboration | ISOLDE |
| Accelerator | CERN ISOLDE |
| Abstract | We propose to perform emission channeling lattice location experiments in a number of semiconductor and oxide systems of technological relevance: - The lattice location of the transition metal probes $^{56}$Mn ($\textit{t}_{1/2}$=2.6 h), $^{59}$Fe (45 d), $^{61}$Co (1.6 h) and $^{65}$Ni (2.5 h) is to be investigated in materials of interest as dilute magnetic semiconductors, such as GaMnAs, GaMnN, GaFeN, AlGaN, SiC, and in a number of oxides that are candidates for “single ion ferromagnetism”, in particular SrTiO$_3$ and LiNbO$_3$. - The topic of $\textit{p}$-type doping of nitride semiconductors shall be addressed by studying the lattice sites of the acceptor dopants Mg and Be in GaN and AlN using the short-lived probes $^{27}$Mg (9.5 min) and $^{11}$Be (13.8 s). The aim is to reach a lattice location precision around 0.05 Å in order to provide critical tests for recent theoretical models which e.g. have predicted displacements of the Mg atom from the ideal substitutional Ga and Al sites of the order of 0.2-0.3 Å. - The feasibility of using the short-lived positron emitter $^{11}$C (20.4 min) for $\beta^+$emission channeling experiments shall be tested. This part of the proposal will make use of newly developed beams of molecular $^{11}$C$^{16}$O$^+$ ions from molten salt targets. |
| Related document(s) | CERN-INTC-2013-031 (INTC-P-391) |