Spatial resolution and efficiency of prototype sensors for the LHCb VELO Upgrade
- Buchanan, E. et al
- arXiv:2201.12130
 | Example residual distribution for a HPK n-on-p sensor (S6), placed perpendicular to the beam and operated near the full depletion voltage (a), logarithmic scale (b). The outer dashed lines indicate $\pm3\times$RMS and the inner dashed lines indicate the {\it truncated RMS}. |
 | Example residual distribution for a HPK n-on-p sensor (S6), placed perpendicular to the beam and operated near the full depletion voltage (a), logarithmic scale (b). The outer dashed lines indicate $\pm3\times$RMS and the inner dashed lines indicate the {\it truncated RMS}. |
 | The intrapixel track positions for cluster sizes: size~1~(a), size~2~(b), size~3~(c) and size~4~(d) for an Micron n-on-p sensor (S25). |
 | The intrapixel track positions for cluster sizes: size~1~(a), size~2~(b), size~3~(c) and size~4~(d) for an Micron n-on-p sensor (S25). |
 | The intrapixel track positions for cluster sizes: size~1~(a), size~2~(b), size~3~(c) and size~4~(d) for an Micron n-on-p sensor (S25). |
 | The intrapixel track positions for cluster sizes: size~1~(a), size~2~(b), size~3~(c) and size~4~(d) for an Micron n-on-p sensor (S25). |
 | The fraction of size~1 (a) and size~2 (b) clusters as a function of the applied bias voltage. Green for HPK n-on-p, blue for Micron n-on-p and purple for Micron n-on-n. |
 | The fraction of size~1 (a) and size~2 (b) clusters as a function of the applied bias voltage. Green for HPK n-on-p, blue for Micron n-on-p and purple for Micron n-on-n. |
 | The fraction of size~1 and size~2 clusters for sensors uniformly irradiated to \maxfluence, placed perpendicular to the beam. Green for HPK n-on-p, blue for Micron n-on-p and purple for Micron n-on-n. |
 | The fraction of size~1 and size~2 clusters as a function of angle, (a) for non-irradiated and (b) for sensors irradiated uniformly to \maxfluence. Green for HPK n-on-p, blue for Micron n-on-p and purple for Micron n-on-n. |
 | The fraction of size~1 and size~2 clusters as a function of angle, (a) for non-irradiated and (b) for sensors irradiated uniformly to \maxfluence. Green for HPK n-on-p, blue for Micron n-on-p and purple for Micron n-on-n. |
 | The fraction of size~1 and size~2 clusters as a function of angle, (a) for non-irradiated and (b) for sensors irradiated uniformly to \maxfluence. Green for HPK n-on-p, blue for Micron n-on-p and purple for Micron n-on-n. |
 | Efficiency as a function of bias voltage, for non-irradiated sensors (a) and irradiated sensors (b). The colour of the markers indicates the vendor and sensor type, where green is for HPK n-on-p, blue is for Micron n-on-p and purple for Micron n-on-n. |
 | Efficiency as a function of bias voltage, for non-irradiated sensors (a) and irradiated sensors (b). The colour of the markers indicates the vendor and sensor type, where green is for HPK n-on-p, blue is for Micron n-on-p and purple for Micron n-on-n. |
 | Cluster finding efficiency as a function of the intrapixel position for two 200\mum thick HPK sensors operated at 300~V uniformly irradiated to the full fluence of \maxfluence. The two sensors differ in implant size: S22 has an implant size of 35\mum (a) and S17 has an implant size of 39\mum (b). |
 | Cluster finding efficiency as a function of the intrapixel position for two 200\mum thick HPK sensors operated at 300~V uniformly irradiated to the full fluence of \maxfluence. The two sensors differ in implant size: S22 has an implant size of 35\mum (a) and S17 has an implant size of 39\mum (b). |
 | The spatial resolution as a function of bias voltage for non-irradiated sensors (a) and for uniformly irradiated sensors to the \maxfluence (b). Green for HPK n-on-p, blue for Micron n-on-p and purple for Micron n-on-n. |
 | The spatial resolution as a function of bias voltage for non-irradiated sensors (a) and for uniformly irradiated sensors to the \maxfluence (b). Green for HPK n-on-p, blue for Micron n-on-p and purple for Micron n-on-n. |
 | The spatial resolution as a function of angle for non-irradiated sensors operated at 200~V (a) and uniformly irradiated sensors to \maxfluence (b). Green for HPK n-on-p, blue for Micron n-on-p and purple for Micron n-on-n. |
 | The spatial resolution as a function of angle for non-irradiated sensors operated at 200~V (a) and uniformly irradiated sensors to \maxfluence (b). Green for HPK n-on-p, blue for Micron n-on-p and purple for Micron n-on-n. |
 | Spatial resolution (a) and the mean cluster size (b) as a function angle, for three different bias voltages for an non-irradiated HPK sensor (S6). |
 | Spatial resolution (a) and the mean cluster size (b) as a function angle, for three different bias voltages for an non-irradiated HPK sensor (S6). |
 | Spatial resolution (a) and the mean cluster size (b) as a function angle, for three different bias voltages for a HPK sensor (S6) uniformly irradiated to the full fluence of \SI{8e15}{\mevneq.}. |
 | Spatial resolution (a) and the mean cluster size (b) as a function angle, for three different bias voltages for a HPK sensor (S6) uniformly irradiated to the full fluence of \SI{8e15}{\mevneq.}. |
 | The spatial resolution (a) and the fraction of clusters (b) as a function of fluence, for an HPK sensor operated at 1000~V placed perpendicular to the beam. |
 | The spatial resolution (a) and the fraction of clusters (b) as a function of fluence, for an HPK sensor operated at 1000~V placed perpendicular to the beam. |
 | The reconstructed fluence profile from irradiation at IRRAD. The dosimetry results, converted to neutron equivalent fluence, for the six regions are indicated by the white numbers ($\times$\fluence). |
 | The number of tracks as a function of the intrapixel track positions depending on cluster size for three different applied voltage. The rows are size~1, size~2, size~3 and size~4 from top to bottom and the columns are 100~V, 500~V and 1000~V from left to right. The example shown is for a HPK n-on-p (S9) sensor uniformly irradiated to \maxfluence. |
 | The number of tracks as a function of the intrapixel track positions depending on cluster size for three different applied voltage. The rows are size~1, size~2, size~3 and size~4 from top to bottom and the columns are 100~V, 500~V and 1000~V from left to right. The example shown is for a HPK n-on-p (S9) sensor uniformly irradiated to \maxfluence. |
 | The number of tracks as a function of the intrapixel track positions depending on cluster size for three different applied voltage. The rows are size~1, size~2, size~3 and size~4 from top to bottom and the columns are 100~V, 500~V and 1000~V from left to right. The example shown is for a HPK n-on-p (S9) sensor uniformly irradiated to \maxfluence. |
 | The number of tracks as a function of the intrapixel track positions depending on cluster size for three different applied voltage. The rows are size~1, size~2, size~3 and size~4 from top to bottom and the columns are 100~V, 500~V and 1000~V from left to right. The example shown is for a HPK n-on-p (S9) sensor uniformly irradiated to \maxfluence. |
 | The number of tracks as a function of the intrapixel track positions depending on cluster size for three different applied voltage. The rows are size~1, size~2, size~3 and size~4 from top to bottom and the columns are 100~V, 500~V and 1000~V from left to right. The example shown is for a HPK n-on-p (S9) sensor uniformly irradiated to \maxfluence. |
 | The number of tracks as a function of the intrapixel track positions depending on cluster size for three different applied voltage. The rows are size~1, size~2, size~3 and size~4 from top to bottom and the columns are 100~V, 500~V and 1000~V from left to right. The example shown is for a HPK n-on-p (S9) sensor uniformly irradiated to \maxfluence. |
 | The number of tracks as a function of the intrapixel track positions depending on cluster size for three different applied voltage. The rows are size~1, size~2, size~3 and size~4 from top to bottom and the columns are 100~V, 500~V and 1000~V from left to right. The example shown is for a HPK n-on-p (S9) sensor uniformly irradiated to \maxfluence. |
 | The number of tracks as a function of the intrapixel track positions depending on cluster size for three different applied voltage. The rows are size~1, size~2, size~3 and size~4 from top to bottom and the columns are 100~V, 500~V and 1000~V from left to right. The example shown is for a HPK n-on-p (S9) sensor uniformly irradiated to \maxfluence. |
 | The number of tracks as a function of the intrapixel track positions depending on cluster size for three different applied voltage. The rows are size~1, size~2, size~3 and size~4 from top to bottom and the columns are 100~V, 500~V and 1000~V from left to right. The example shown is for a HPK n-on-p (S9) sensor uniformly irradiated to \maxfluence. |
 | The number of tracks as a function of the intrapixel track positions depending on cluster size for three different applied voltage. The rows are size~1, size~2, size~3 and size~4 from top to bottom and the columns are 100~V, 500~V and 1000~V from left to right. The example shown is for a HPK n-on-p (S9) sensor uniformly irradiated to \maxfluence. |
 | The number of tracks as a function of the intrapixel track positions depending on cluster size for three different applied voltage. The rows are size~1, size~2, size~3 and size~4 from top to bottom and the columns are 100~V, 500~V and 1000~V from left to right. The example shown is for a HPK n-on-p (S9) sensor uniformly irradiated to \maxfluence. |
 | The number of tracks as a function of the intrapixel track positions depending on cluster size for three different applied voltage. The rows are size~1, size~2, size~3 and size~4 from top to bottom and the columns are 100~V, 500~V and 1000~V from left to right. The example shown is for a HPK n-on-p (S9) sensor uniformly irradiated to \maxfluence. |
 | The number of tracks as a function of the intrapixel track positions depending on cluster size for a 200~$\mum$ non-irradiated Micron n-on-p sensor (S25) at angles of 8$^{\circ}$, 16$^{\circ}$ and 22$^{\circ}$ relative to the beam. The rows are size~1, size~2, size~3 and size~4 from top to bottom and the columns are 8$^{\circ}$, 16$^{\circ}$ and 22$^{\circ}$ from left to right. |
 | The number of tracks as a function of the intrapixel track positions depending on cluster size for a 200~$\mum$ non-irradiated Micron n-on-p sensor (S25) at angles of 8$^{\circ}$, 16$^{\circ}$ and 22$^{\circ}$ relative to the beam. The rows are size~1, size~2, size~3 and size~4 from top to bottom and the columns are 8$^{\circ}$, 16$^{\circ}$ and 22$^{\circ}$ from left to right. |
 | The number of tracks as a function of the intrapixel track positions depending on cluster size for a 200~$\mum$ non-irradiated Micron n-on-p sensor (S25) at angles of 8$^{\circ}$, 16$^{\circ}$ and 22$^{\circ}$ relative to the beam. The rows are size~1, size~2, size~3 and size~4 from top to bottom and the columns are 8$^{\circ}$, 16$^{\circ}$ and 22$^{\circ}$ from left to right. |
 | The number of tracks as a function of the intrapixel track positions depending on cluster size for a 200~$\mum$ non-irradiated Micron n-on-p sensor (S25) at angles of 8$^{\circ}$, 16$^{\circ}$ and 22$^{\circ}$ relative to the beam. The rows are size~1, size~2, size~3 and size~4 from top to bottom and the columns are 8$^{\circ}$, 16$^{\circ}$ and 22$^{\circ}$ from left to right. |
 | The number of tracks as a function of the intrapixel track positions depending on cluster size for a 200~$\mum$ non-irradiated Micron n-on-p sensor (S25) at angles of 8$^{\circ}$, 16$^{\circ}$ and 22$^{\circ}$ relative to the beam. The rows are size~1, size~2, size~3 and size~4 from top to bottom and the columns are 8$^{\circ}$, 16$^{\circ}$ and 22$^{\circ}$ from left to right. |
 | The number of tracks as a function of the intrapixel track positions depending on cluster size for a 200~$\mum$ non-irradiated Micron n-on-p sensor (S25) at angles of 8$^{\circ}$, 16$^{\circ}$ and 22$^{\circ}$ relative to the beam. The rows are size~1, size~2, size~3 and size~4 from top to bottom and the columns are 8$^{\circ}$, 16$^{\circ}$ and 22$^{\circ}$ from left to right. |
 | The number of tracks as a function of the intrapixel track positions depending on cluster size for a 200~$\mum$ non-irradiated Micron n-on-p sensor (S25) at angles of 8$^{\circ}$, 16$^{\circ}$ and 22$^{\circ}$ relative to the beam. The rows are size~1, size~2, size~3 and size~4 from top to bottom and the columns are 8$^{\circ}$, 16$^{\circ}$ and 22$^{\circ}$ from left to right. |
 | The number of tracks as a function of the intrapixel track positions depending on cluster size for a 200~$\mum$ non-irradiated Micron n-on-p sensor (S25) at angles of 8$^{\circ}$, 16$^{\circ}$ and 22$^{\circ}$ relative to the beam. The rows are size~1, size~2, size~3 and size~4 from top to bottom and the columns are 8$^{\circ}$, 16$^{\circ}$ and 22$^{\circ}$ from left to right. |
 | The number of tracks as a function of the intrapixel track positions depending on cluster size for a 200~$\mum$ non-irradiated Micron n-on-p sensor (S25) at angles of 8$^{\circ}$, 16$^{\circ}$ and 22$^{\circ}$ relative to the beam. The rows are size~1, size~2, size~3 and size~4 from top to bottom and the columns are 8$^{\circ}$, 16$^{\circ}$ and 22$^{\circ}$ from left to right. |
 | The number of tracks as a function of the intrapixel track positions depending on cluster size for a 200~$\mum$ non-irradiated Micron n-on-p sensor (S25) at angles of 8$^{\circ}$, 16$^{\circ}$ and 22$^{\circ}$ relative to the beam. The rows are size~1, size~2, size~3 and size~4 from top to bottom and the columns are 8$^{\circ}$, 16$^{\circ}$ and 22$^{\circ}$ from left to right. |
 | The number of tracks as a function of the intrapixel track positions depending on cluster size for a 200~$\mum$ non-irradiated Micron n-on-p sensor (S25) at angles of 8$^{\circ}$, 16$^{\circ}$ and 22$^{\circ}$ relative to the beam. The rows are size~1, size~2, size~3 and size~4 from top to bottom and the columns are 8$^{\circ}$, 16$^{\circ}$ and 22$^{\circ}$ from left to right. |
 | The number of tracks as a function of the intrapixel track positions depending on cluster size for a 200~$\mum$ non-irradiated Micron n-on-p sensor (S25) at angles of 8$^{\circ}$, 16$^{\circ}$ and 22$^{\circ}$ relative to the beam. The rows are size~1, size~2, size~3 and size~4 from top to bottom and the columns are 8$^{\circ}$, 16$^{\circ}$ and 22$^{\circ}$ from left to right. |