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<references>
<reference>
  <a1>Senger, Matias</a1>
  <a2>Borghi, Giacomo</a2>
  <a2>Boscardin, Maurizio</a2>
  <a2>Centis Vignali, Matteo</a2>
  <a2>Kilminster, Ben</a2>
  <a2>Macchiolo, Anna</a2>
  <a2>Paternoster, Giovanni</a2>
  <a2>Bisht, A</a2>
  <a2>Ficorella, F</a2>
  <a2>Hammad Ali, O</a2>
  <t1>Characterization of timing and spacial resolution of novel TI-LGAD structures before and after irradiation</t1>
  <t2>Publication</t2>
  <sn/>
  <op/>
  <vo>Volume 1039</vo>
  <ab>The characterization of spacial and timing resolution of the novel Trench Isolated LGAD (TI-LGAD) technology is presented. This technology has been developed at FBK with the goal of achieving 4D pixels, where an accurate position resolution is combined in a single device with the precise timing determination for Minimum Ionizing Particles (MIPs). In the TI-LGAD technology, the pixelated LGAD pads are separated by physical trenches etched in the silicon. This technology can reduce the interpixel dead area, mitigating the fill factor problem. The TI-RD50 production studied in this work is the first one of pixelated TI-LGADs. The characterization was performed using a scanning TCT setup with an infrared laser and a strontium source setup.</ab>
  <la>ara</la>
  <k1>Silicon sensors;
                Fast detectors;
                TI-LGAD;
                LGAD;
                Radiation;
                4D-tracking;
                </k1>
  <pb/>
  <pp/>
  <yr>2022</yr>
  <ed/>
  <ul/>
  <no>Imported from Invenio.</no>
</reference>

</references>