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CERN Accelerating science

ATLAS Note
Report number ATL-INDET-PROC-2026-002
Title Evaluation of the charge collection properties on the silicon strip detector of the LHC-ATLAS experiment
Author(s) Kita, Sayuka (University of Tsukuba (JP))
Corporate Author(s) The ATLAS collaboration
Collaboration ATLAS Collaboration
Publication 2026
Imprint 13 Mar 2026
Number of pages 5
In: 14th international "Hiroshima" Symposium on the Development and Application of Semiconductor Tracking Detectors (HSTD-14), Taipei, Tw, 14 - 21 Nov 2025
Subject category Particle Physics - Experiment
Accelerator/Facility, Experiment CERN LHC ; ATLAS
Free keywords LHC ; ATLAS ; Semiconductor detector ; Silicon strip
Abstract The LHC-ATLAS experiment has been operating since 2010, performing searches for new particles and precision measurements. The SemiConductor Tracker (SCT) is a key subsystem of the ATLAS detector, providing precise tracking information for charged particles. Since SCT is located at a radius of 30--50 cm from the beam pipe, it has been exposed to a radiation fluence of the order of $\mathcal{O}$(10$^{13}$) \neqcm over approximately 15 years of operation. As a consequence of radiation damage, the charge collection efficiency of the sensors is expected to decrease, potentially impacting the hit efficiency of the detector. We therefore established a new method to evaluate the charge collection efficiency using the threshold scan data, even SCT is a binary readout. By dividing SCT modules into several groups in $\phi$ with different HV settings, we successfully measured the charge collection efficiency of the SCT while minimizing impacts on the quality of the physics data. In this paper, the charge collection efficiency of the SCT and its evolution in 2024 and 2025 are presented using the method.



 ჩანაწერი შექმნილია 2026-03-13, ბოლოს შესწორებულია 2026-03-14


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