Compilation of radiation damage test data Guarino Francesco Hauviller Claude Tavlet Marc CERN 2001 BOOK

Compilation of radiation damage test data Tavlet Marc CERN Fontaine Anne CERN Schönbacher Helmut CERN 1998 BOOK

Radiation damage of semiconductors by protons Backenstoss Gerhard Braunersreuther Eberhard Goebel Klaus 1962 BOOK

Compilation of radiation damage test data Tavlet Marc Schönbacher Helmut 1989 BOOK

Radiation damage to electronic components Battisti Sylvain Bossart Rudolf Schönbacher Helmut Van de Voorde Marcel Hubert 1975 BOOK

A comparison of the radiation damage of electronic components irradiated in different radiation fields Lambert K P Schönbacher Helmut Van de Voorde Marcel Hubert 1975 BOOK

Radiation damage to organic scintillation materials Marini G U. Rome La Sapienza (main) Donatelli I U. Rome La Sapienza (main) Nigro A U. Rome La Sapienza (main) Martellotti G U. Rome La Sapienza (main) De Vincenzi M U. Rome La Sapienza (main) Sciubba A U. Rome La Sapienza (main) Coninckx F CERN Crosetti G CERN Schönbacher H CERN 1985 BOOK

Radiation tests on selected electrical insulating materials for high-power and high-voltage application Lipták G Brown Boveri, Baden Haberthur B Maier P Müller Hubert Schuler Roland Schönbacher Helmut Zeier Z 1985 BOOK

Compilation of radiation damage test data Beynel P Maier P CERN Schönbacher H CERN 1982 For pt.II see CERN report 79-08 (1979). This handbook gives the results of radiation damage tests on various engineering materials and components intended for installation in radiation areas of the CERN high-energy particle accelerators. It complements two previous volumes covering organic cable-insulating materials and thermoplastic and thermosetting resins. BOOK

Compilation of radiation damage test data Schönbacher H CERN Stolarz-Izycka A CERN 1979 This report summarizes radiation damage test data on commercially available organic cable insulation and jacket materials: ethylene- propylene rubber, Hypalon, neoprene rubber, polyethylene, polyurethane, polyvinylchloride, silicone rubber, etc. The materials have been irradiated in a nuclear reactor to integrated absorbed doses from 5*10/sup 5/ to 5*10/sup 6/ Gy. Mechanical properties, e.g. tensile strength, elongation at break, and hardness, have been tested on irradiated and non-irradiated samples. The results are presented in the form of tables and graphs, to show the effect of the absorbed dose on the measured properties. (13 refs). BOOK

Compilation of radiation damage test data Schönbacher H CERN Stolarz-Izycka A CERN 1979 BOOK

The effect of nuclear radiation on the electrical properties of epoxy resins Van de Voorde Marcel Hubert 1968 BOOK

Action des radiations ionisantes sur les résines epoxydes Van de Voorde Marcel Hubert 1970 BOOK

Déformation rémanente après compression constante des élastomères. Influence de l'irradiation sur ce paramètre Beynel P 1976 technical-report

Radiation and fire tests on power cable insulating materials for SPS North Area Schönbacher H 1976 technical-report

Installation of boxes for long-term material tests and high-level dosimetry in the SPS Schönbacher H 1976 technical-report

Effects of reactor radiation on the electrical resistivity of copper at room temperature McGrath B Schönbacher H Van de Voorde M 1975 technical-report

Radiation hazard from tensile tests on reactor irradiated samples Schönbacher H 1975 technical-report

Proposal for a catalog of radiation damage results Schönbacher H 1975 technical-report

Etude sur le comportement mécanique d'une résine soumise aux radiations Beynel P Schönbacher H 1975 technical-report

Analysis of general inquiry into the effects of nuclear radiation at room temperature on the electrical resistivity of industrial copper McGrath B Schönbacher H Van de Voorde M 1975 technical-report

Tenue aux rayons ionisants des matériaux isolants sous forme de bandes auto-adhésives Beynel P 1975 technical-report

Minutes of discussions on radiation damage tests during production of main ring magnets (14 and 15.1.1975) Schönbacher H 1975 technical-report

Radiation and fire tests on cable insulating materials proposed by IKO for control cables Beynel P Schönbacher H 1974 technical-report

Summary of a second irradiation test on the PAT prototype circuit boards Moy B 1974 technical-report

Mechanical test results on irradiated cable insulating materials Schönbacher H 1974 technical-report

Radiation and fire tests on cable insulating material NR 242 Schönbacher H 1974 technical-report

Radiation tests on epoxy resin NR 172 Schönbacher H 1974 technical-report

Analyse d'échantillons irradiés Caniac G 1974 technical-report

Resistance of organic and inorganic materials to high-energy radiation Lambert K P Schönbacher H Van de Voorde M 1974 technical-report

Radiation and fire tests on cable insulating materials proposed by Thomson-Brandt for 1KV-cables Schönbacher H 1973 technical-report

Mechanical tests on irradiated epoxy-resins from alsthom Schönbacher H 1973 technical-report

Note concernant l'établissement d'un ensemble d'éssais systématiques de résistance mécanique de O-Ring subissant des irradiations Beynel P 1973 technical-report

Radiation and fire tests on cable insulating materials proposed by KABELMETALL for HV-cables Schönbacher H 1973 technical-report

The use of the BR-2 reactor in MOL for radiation damage studies on material Schönbacher H 1973 technical-report

Radiation tests on epoxy resins NR. 163 and 164 Schönbacher H 1973 technical-report

Test results on the following topics are available and will de distributed to the persons concerned together with appropriate recommendations Schönbacher H 1973 technical-report

Results on radiation and fire tests on cable insulating materials supplied by 12 european companies for control cables Schönbacher H Van de Voorde M 1973 technical-report

Normes appliquées concernant les tests d'inflammabilité sur isolants électriques soumis aux radiations Beynel P 1973 technical-report

Deuxième rapport des tests d'irradiation des matériaux utilisés dans l'anneau du LEP Beynel P Tartaglia G P Tavlet M 1987 ARC011001

Results of radiation tests 1972 technical-report

Probes for radiation tests Keizer R L Mottier M Schönbacher H Streun F 1973 technical-report

Nucl. Instrum. Methods Phys. Res., A Nucl. Instrum. Methods Phys. Res., A 0167-5087 Radiation damage of LSO crystals under $\gamma-$ and 24GeV protons irradiation Auffray E CERN Barysevich A Minsk, Inst. Nucl. Problems Fedorov A Minsk, Inst. Nucl. Problems Korjik M Minsk, Inst. Nucl. Problems Koschan M Tennessee U. Lucchini M CERN Mechinski V Minsk, Inst. Nucl. Problems Melcher C.L Tennessee U. Voitovich A Minsk, Inst. Phys. 2013 721 76 82 research-article

IEEE Trans. Nucl. Sci. IEEE Trans. Nucl. Sci. 0018-9499 Radiation damage effects on CMS sensors quality assurance and irradiation tests Furgeri Alexander J Assouak S de Boer Wim Forton E Freudenstein S Hartmann F 2004 51 3063 3068 The Large Hadron Collider (LHC) at the Centre Europeenne pour la Recherche Nucleaire (CERN), Geneva, Switzerland, is a proton-proton collider with a luminosity of 10**3**4/cm**2s and will be working for ten years (starting in 2007). The Compact Muon Solenoid (CMS) will be one of the four general-purpose detectors. The CMS tracker consists of ten barrel layers, plus 2 multiplied by 9 end cap discs, which amounts to a total of 24 328 silicon sensors with a total area of 206 m**2 silicon, covering a pseudorapidity of vertical bar eta; vertical bar less than approximately equals 2.5. For the sensors close to the beam pipe, fluences of 1.6 center dot 10**1**4n//1 MeV/cm**2 are expected over the ten-year lifetime. To guarantee the functionality of the single-side silicon sensors during the runtime of the LHC, quality assurance was developed. In the two Irradiation Qualification Centers (IQCs) in Karlsruhe, Germany, and Louvain-la-Neuve, Belgium, a fraction of 1% of the sensors are electrically qualified. In Karlsruhe, the sensors are irradiated with 26-MeV protons and in Louvain-la-Neuve with neutrons at an average energy of 20 MeV. For reasons of flux uncertainties in the CMS tracker, sensors are irradiated with a fluence 50% higher than predicted. For standard float zone silicon, large material dependencies have been observed under irradiation resulting in changes to various electrical parameters. To guarantee the functionality of the sensors in the tracker, it is very important to know these parameters. These electrical parameters have been determined before and after irradiation and are discussed in the following sections. research-article

Kerntech. Kerntech. Study on radiation damage to high energy accelerator components by irradiation in a nuclear reactor Schönbacher Helmut Burtscher A Casta J Van de Voorde M H 1975 17 268 80 The structural and other components used in high energy accelerators are continuously exposed to a wide spectrum of high energy particles and electromagnetic radiation. The resulting radiation damage may severely influence the functional capability of accelerator facilities. In order to arrive at an estimate of the service life of various materials in the radiation field, simulating experiments have to be carried out in a nuclear reactor. A large number of organic and inorganic materials, electronic components, metals, etc., intended specifically for use in 400 GeV proton synchrotron of CERN near Geneva, were irradiated in the ASTRA reactor in Seibersdorf near Vienna. The paper reports on the irradiation facilities available in this reactor for this purpose, on the dosimetry methods used, on the most important materials irradiated and on the results obtained in these experiments. (14 refs). research-article

Radiation damage effects on CMS-sensors quality assurance and irradiation tests Furgeri A J Assouak S de Boer Wim Forton E Hartmann F Freudenstein S 2004 The LHC at CERN (Geneva, Switzerland) is a proton-proton collider with a luminosity of 10/sup 34/ (1/cm/sup 2/s) be working for 10 years (starting in 2007). CMS will be one of the general purpose detectors. The CMS tracker consists of 10 barrel layers, plus 2 times 9 endcap disks, all together 24328 silicon sensors with a total area of 206m/sup 2/ silicon, covering a pseudorapidity of eta <or= 2.5. For the sensors close to the beam pipe fluences of 1.6 10/sup 14/ (n1MeV/cm/sup 2/) are expected over the 10 years lifetime. To guarantee the functionality of the single side silicon sensors during the runtime of LHC a quality assurance was developed. In the 2 Irradiation Qualification Centers (IQC) in Karlsruhe (Germany) and Louvain-la-Neuve (Belgium) a fraction of 1% of the sensors are electrically qualified. In Karlsruhe the sensors are irradiated with 26 MeV - protons and in Louvain-la-Neuve with fast neutrons. For safety reasons sensors are irradiated with a fluence 50% higher than predicted. The electrical parameters are determined before and after irradiation. (3 refs). research-article

IEEE Trans. Nucl. Sci. IEEE Trans. Nucl. Sci. 0018-9499 Comparison of radiation damage in silicon induced by proton and neutron irradiation Ruzin A Casse G L Glaser M Zanet A Lemeilleur F Watts S 1999 46 1310 13 The subject of radiation damage to Si detectors induced by 24-GeV/c protons and nuclear reactor neutrons has been studied. Detectors fabricated on single-crystal silicon enriched with various impurities have been tested. Significant differences in electrically active defects have been found between the various types of material. The results of the study suggest for the first time that the widely used nonionizing energy loss (NIEL) factors are insufficient for normalization of the electrically active damage in case of oxygen- and carbon-enriched silicon detectors. It has been found that a deliberate introduction of impurities into the semiconductor can affect the radiation hardness of silicon detectors. (16 refs). research-article

Nucl. Instrum. Methods Phys. Res., A Nucl. Instrum. Methods Phys. Res., A 0167-5087 Damage observed in silicon diodes after low-energy pion irradiation Aarnio Pertti A Huhtinen M Pimiä M Kaita K Laakso Mikko Numminen A Ryytty P 1995 360 521 531 research-article

Radiation-damage studies, irradiations and high-dose dosimetry for LHC detectors Coninckx F Heijne Erik H M León-Florián E Leutz H Schönbacher Helmut Sonderegger P Tavlet Marc CERN Sopko B Henschel H Schmidt H U Boden A Bräunig D Wulf F Cramariuc R Ilie D Fattibene P Onori S Miljanic S Paic G Razen B Razem D Rendic D 1991 The proposal is divided into a main project and special projects. The main project consists of a service similar to the one given in the past to accelerator construction projects at CERN (ISR,SPS,LEP) on high-dose dosimetry, material irradiations, irradiations tests, standardization of test procedures and data compilations. Large experience in this field and numerous radiation damage test data of insulating and structural materials are available. The special projects cover three topics which are of specific interest for LHC detector physicists and engineers at CERN and in other high energy physics institutes, namely: Radiation effects in scintillators; Selection of radiation hard optical fibres for data transmission; and Selection and testing of radiation hard electronic components. SCICOMMPUBLDRDC

Résistance aux rayonnements ionisants de matériaux installés autour des accélérateurs du CERN Schönbacher H CERN 1982 research-article

Nucl. Instrum. Methods Phys. Res., A Nucl. Instrum. Methods Phys. Res., A 0167-5087 Irradiation and beam tests qualification for ATLAS IBL Pixel Modules Rubinskiy Igor DESY 2013 699 67 71 The upgrade for the ATLAS detector will have different steps towards HL-LHC. The first upgrade for the Pixel Detector will consist in the construction of a new pixel layer which will be installed during the first shutdown of the LHC machine (foreseen for 2013-14). The new detector, called Insertable B-Layer (IBL), will be inserted between the existing pixel detector and a new (smaller radius) beam-pipe at a radius of 33 mm. The IBL will require the development of several new technologies to cope with the increase of the radiation damage and the pixel occupancy and also to improve the physics performance, which will be achieved by reduction of the pixel size and of the material budget. Two different promising silicon sensor technologies (Planar n-in-n and 3D) are currently under investigation for the pixel detector. An overview of the sensor technologies’ qualification with particular emphasis on irradiation and beam tests are presented. research-article

Nucl. Instrum. Methods Phys. Res., B Nucl. Instrum. Methods Phys. Res., B Absorbed doses and radiation damage during the 11 years of LEP operation Schönbacher H CERN Tavlet M CERN 2004 217 77 96 During the 11 years of operation of the Large Electron Positron Collider (LEP), synchrotron radiation was emitted in the tunnel. This ionizing radiation induced degradation in organic insulators and structural materials, as well as in electronics. Annual dosimetric measurements have shown that the level of radiation increased with the ninth power of the beam energy. During the machine shut-downs and at the end of the operation, samples of rigid and flexible polymeric insulators (magnet-coil resins and cable insulations) were taken out and checked for their integrity. The test results are compared with the results obtained during the qualification of the materials, 12 to 15 years ago. At that time, lifetime predictions were done; they are now compared with the real time aged materials. research-article

Nucl. Instrum. Methods Phys. Res., A Nucl. Instrum. Methods Phys. Res., A 0167-5087 Radiation tests of CMS RPC muon trigger electronic components Bunkowski Karol Kassamakov Ivan Kierzkowski Krzysztof Królikowski J Kudla MacIej Maenpaa Teppo Pozniak Krzysztof T Rybka Dominik Tuominen Eija Ungaro Donatella Wrochna Grzegorz Zabolotny W M 2005 538 708 717 The results of proton irradiation test of electronic devices, selected for the RPC trigger electronic system of the CMS detector, will be presented. For Xilinx Spartan-IIE FPGA the cross-section for Single Event Upsets (SEUs) in configuration bits was measured. The dynamic SEUs in flip-flops were also investigated, but not observed. For the FLASH memories no single upsets were detected. Only after irradiating with a huge dose permanent damages of devices were observed. For Synchronous Dynamic Random Access Memory (SDRAM), the SEU cross-section was measured. research-article

Nucl. Instrum. Methods Phys. Res., A Nucl. Instrum. Methods Phys. Res., A 0167-5087 Radiation tests of photodiodes for the ATLAS SCT and PIXEL opto- links Hou L S Chu M L Lee S C Su D S Teng P K 2005 539 105 111 In previous research, epitaxial Si PIN photodiodes produced by Centronic which will be used in the ATLAS semiconductor tracker have been irradiated with 1 MeV neutrons and 24 GeV protons with fluences up to an equivalent of $10^{15}$ 1 MeV neutrons (1,2) . In this work 30 MeV proton beams were used to irradiate Centronic and Truelight epitaxial Si PIN diodes with accumulated fluences of up to 2.1 multiplied by $10^{14}$-30 MeV p $cm^{-2}$, an equivalent of 5.7 multiplied by $10^{14} cm^{-2}$ 1 MeV neutrons, to reach the pixel radiation environment. The responsivity was measured with different levels of fluence in order to study the responsivity behaviour of two different types of photodiodes. The responsivity behaviour of these two photodiodes was similar: a linear degradation at large fluences, greater than $10^{14}$ 30 MeV p $cm^{-2}$, but with different slopes. The response of the Centronic PIN diode showed a degradation to 73% after a proton fluence of $10^{13}$ p $cm^{-2}$ of 30 MeV and a linear degradation at a rate of -0.32% per $10^{13}$ p $cm^{-2}$ for fluences larger than $10^{13}$ 30 MeV p $cm^{-2}$. The Truelight PIN degraded to 84% after a fluence of $10^{13}$ p $cm^{-2}$, with a linear degradation rate of -1.8% per $10^{13}$ p $cm^{-2}$. Annealing of both photodiodes with a bias voltage of -10 V for 180 h showed a 7% recovery for the Truelight PIN diode and a 2% recovery for the Centronic PIN diode after irradiation fluences of 2.1 multiplied by $10^{14}$ p $cm^{-2}$. A gamma source was also used to irradiate 6 Truelight PIN diodes with a total dose larger than 600 kGy; no obvious responsivity change was observed in this case. research-article

Probing and irradiation tests of ALICE pixel chip wafers and sensors Cinausero M Fioretto E Antinori F Chochula P Dinapoli R Dima R Fabris D Galet G Lunardon M Manea C Marchini S Martini S Moretto S Pepato Adriano Prete G Riedler P Scarlassara F Segato G F Soramel F Stefanini G Turrisi R Vannucci L Viesti G 2004 In the framework of the ALICE Silicon Pixel Detector (SPD) project a system dedicated to the tests of the ALICE1LHCb chip wafers has been assembled and is now in use for the selection of pixel chips to be bump-bonded to sensor ladders. In parallel, radiation hardness tests of the SPD silicon sensors have been carried out using the 27 MeV proton beam delivered by the XTU TANDEM accelerator at the SIRAD facility in LNL. In this paper we describe the wafer probing and irradiation set-ups and we report the obtained results. (6 refs). research-article

Irradiation tests of ROHM 0.35um ASIC and Actel Anti-fuse FPGA for the ATLAS Muon Endcap Level-1 Trigger System Ichimiya R Kobe U. Tsuji S Kobe U. Arai Y KEK, Tsukuba Ikeno M KEK, Tsukuba Sasaki O KEK, Tsukuba Ohshita H Shinshu U. Takada N Shinshu U. Hane Y Tokyo U., ICEPP Hasuko K Tokyo U., ICEPP Nomoto H Tokyo U., ICEPP Sakamoto H Tokyo U., ICEPP Shibuya K Tokyo U., ICEPP Takemoto T Tokyo U., ICEPP Fukunaga C Tokyo Metropolitan U. Toshima K Tokyo Metropolitan U. Sakuma T Tokyo U. of Agric. Tech. 2004 In order to implement a level-1 trigger logic in an efficient manner from timing and space consumption point of view, application specific IC chips (ASIC) as well as FPGA ones are vitally used in the ATLAS muon end-cap level-1 trigger system. Various subsidiary logics are implemented in FPGAs while the core trigger logic is implemented in ASICs. These components will suffer for ten years the radiation of approximately 100Gy of total ionizing dose (TID) and a hadron fluence of 2x10^10hadrons/cm^2, which will cause single event upset (SEU) or single event latch up (SEL). We intend to use Rohm 0.35um gate width CMOS technology for ASIC and Actel anti-fuse based FPGA. In this presentation we report the result of irradiation test of devices made with these technologies and discuss validity of them to use in the system. INTNOTEATLASPUBL

ICFA Instrum. Bull. ICFA Instrum. Bull. Radiation Damage and Long-Term Aging in Gas Detectors Titov Maxim 2004 26 Aging phenomena constitute one of the most complex and serious potential problems which could limit, or severely impair, the use of gaseous detectors in unprecedented harsh radiation environments. Long-term operation in high-intensity experiments of the LHC-era not only demands extraordinary radiation hardness of construction materials and gas mixtures but also very specific and appropriate assembly procedures and quality checks during detector construction and testing. Recent experimental data from hadron beams is discussed. It is shown that the initial stage of radiation tests, usually performed under isolated laboratory conditions, may not offer the full information needed to extrapolate to the long-term performance of real and full-size detectors at high energy physics facilities. Major factors, closely related to the capability of operating at large localized ionization densities, and which could lead to operation instabilities and subsequent aging phenomena in gaseous detectors, are summarized. Finally, an overview of aging experience with state-of-the-art gas detectors in experiments with low- and high-intensity radiation environments is given with a goal of providing a set of rules, along with some caveat, for the construction and operation of gaseous detectors in high luminosity experiments. research-article

The test results of the fluorescence properties and radiation damage of lead tungstate crystal Hong-Fang C Zizong X Zhao Min W Cheng L Tong X Chong W Zhu Fang G Hui Z 1997 research-article

Material irradiation tests at CERN Schönbacher H CERN 1984 research-article

Characterization of irradiated test structures for the CMS tracker upgrade Lutzer Bernhard Vienna, OAW 2012 The CMS collaboration is currently conducting a campaign to identify radiation-hard materials for the CMS tracker upgrade. Several different test structures (TS) and sensors have been designed for a 6 inch wafer layout. These wafers were produced by an industrial supplier (Hamamatsu Photonics K.K.) and differ by their bulk material (Float Zone, Magnetic Czochralski and CVD-Epi), thickness (from 50 $\mu$m to 320 $\mu$m) and N/P-type doping. These TS consist of different microelectronic devices like diodes, resistors or MOS structures. They enable the extraction of parameters which are not accessible in a silicon detector and allow the assessment of the quality of the sensors which are produced on the same wafer. The TS have been irradiated with protons and neutrons to emulate the radiation damage caused by the particle fluence inside the CMS tracker after 10 years of operation. This contribution will present measurements of non-irradiated and irradiated test structures at different fluencies. The changes of the properties of the microelectronic devices will be discussed as well as the design of the TS. INTNOTECMSPUBL

Radiation damage tests on epoxy resins Pluym G Van de Voorde M H 1967 PREPRINT

Radiation damage to insulation materials Tartaglia G P CERN Beynel P CERN 1986 RP_RESTRICTED

Estimate of life performance of cable insulating materials from accelerated radiation damage tests for the CERN LEP project Maier P Schönbacher HTIS-RP-121-CF 1984 PREPRINT

Irradiation en H.P. avec une source 238-Pu à des fins de calibration Regelbrugge A 1976 technical-report

Radiation damage to insulation materials Beynel P CERN Coninckx F CERN Maier P CERN 1980 RP_RESTRICTED

Studies on Irradiated Silicon Sensors for the CMS Tracker at the HL-LHC Nürnberg Andreas Karlsruhe U. For the high luminosity phase of the LHC at CERN, the strip tracker of the CMS Experiment will be replaced due to higher demands on track density, track trigger and radiation damage. To study these aspects, more than 40 different silicon sensors were irradiated. Besides lab measurements, tests in an electron beam and Lorentz angle measurements were performed. A simulation model, which is capable to predict the charge distribution after a particle hit has been developed from these measurements. technical-report

Note sur la tenue a l'irradiation des joints O-Ring Beynel P 1975 technical-report

Tenue à l'irradiation des ligatures AMP Beynel P 1975 technical-report

Tenue à l'irradiation du matériel isolant électrique "ISOVOLTA" Beynel P 1975 technical-report

Tenue à l'irradiation de câbles plats de commande et d'alimentation des palans utilisés au SPS Beynel P Schönbacher H 1975 technical-report

Irradiation de résines pour le tunnel SPS Beynel P 1975 technical-report

Irradiation conditions in the ISR for radiation damage studies Schönbacher H 1974 technical-report

Tenue à l'irradiation des principaux matériaux composant un moteur électrique Beynel P 1975 technical-report

Irradiation de verres Beynel P 1974 technical-report

Corrorion aqueuse de l'aluminium et des alliages de l'aluminium influence de l'irradiation Perrot A 1981 ARC011001