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ggg
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1.
Silicon avalanche photodiodes on the base of metal-resistor-semiconductor (MRS) structures / Saveliev, V ; Golovin, V
The development of a high quantum efficiency, fast photodetector, with internal gain amplification for the wavelength range 450-600 nm is one of the critical issues for experimental physics - registration of low-intensity light photons flux. The new structure of Silicon Avalanche Detectors with high internal amplification (10 sup 5 -10 sup 6) has been designed, manufactured and tested for registration of visible light photons and charge particles. [...]
2000 - Published in : Nucl. Instrum. Methods Phys. Res., A 442 (2000) 223-229
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