CERN Accelerating science

EP RDET Approved

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2025-01-20
11:37
Development of a Novel Low-mass Module Flex PCB Using Nano-wire-based Flip-chip Interconnection
The presented study introduces a novel low-mass, flexible printed circuit board (PCB) designed for the high-density integration of silicon pixel chips, utilizing a flip-chip integration strategy. [...]
CERN-EP-RDET-2025-002.
- 7.
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2025-01-10
10:26
Laboratory and beam-test performance study of a 55 μm pitch iLGAD sensor bonded to a Timepix3 readout chip / Svihra, Peter (Czech Academy of Sciences (CZ)) ; Bates, Richard (University of Glasgow (GB)) ; Braach, Justus (CERN) ; Buschmann, Eric (Brookhaven National Laboratory (US)) ; Dannheim, Dominik (CERN) ; Maneuski, Dima (University of Glasgow (GB)) ; Moffat, Neil (Consejo Superior de Investigaciones Cientificas (CSIC) (ES)) ; Otarid, Younes (CERN)
This contribution reports on characterisation results of a large-area (2 cm2) small pitch (55 μm) inverse Low-Gain Avalanche Detector (iLGAD), bonded to a Timepix3 readout chip. [...]
CERN-EP-RDET-2025-001.
- 11.
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2024-12-06
11:28
First Look at Particle Flow in a LAr Calorimeter Using Pandora in the Key4hep Framework / Sasikumar, Swathi (CERN) ; Sailer, Andre (CERN) ; Francois, Brieuc (CERN)
Future detector studies rely on advanced software tools for performance estimation and design optimization. [...]
CERN-EP-RDET-2024-003 ; PoS 1142.
- 4.
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2024-09-13
17:09
SystemC framework for architecture modelling of electronic systems in future particle detectors / Ceresa, Davide (CERN) ; Brambilla, Francesco Enrico (KU Leuven (BE)) ; Dhaliwal, Jashandeep (CERN) ; Esposito, Stefano (CERN) ; Kloukinas, Kostas (CERN) ; Llopart Cudie, Xavi (CERN) ; Pulli, Adithya (CERN)
The prototyping cost in advanced technology nodes and the complexity of future detectors require the adoption of a system design approach common in the industry: design space exploration through high-level architectural studies to achieve clear and optimized specifications. This contribution proposes a configurable SystemC framework to simulate the readout chain from the front-end chips to the detector back-end. [...]
CERN-EP-RDET-2024-002.- 2024 - 5 p. Fulltext: PDF;

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2024-07-02
07:03
Towards a new generation of Monolithic Active Pixel Sensors / Chauhan, Ankur (DESY) ; Viera, Manuel Del Rio (DESY ; Bonn U.) ; Eckstein, Doris (DESY) ; Feindt, Finn (DESY) ; Gregor, Ingrid-Maria (DESY) ; Hansen, Karsten (DESY) ; Huth, Lennart (DESY) ; Mendes, Larissa (DESY ; U. Campinas) ; Mulyanto, Budi (DESY) ; Rastorguev, Daniil (DESY ; Wuppertal U.) et al.
A new generation of Monolithic Active Pixel Sensors (MAPS), produced in a 65 nm CMOS imaging process, promises higher densities of on-chip circuits and, for a given pixel size, more sophisticated in-pixel logic compared to larger feature size processes. MAPS are a cost-effective alternative to hybrid pixel sensors since flip-chip bonding is not required. [...]
arXiv:2210.09810.- 2023 - 3 p. - Published in : Nucl. Instrum. Methods Phys. Res., A 1047 (2023) 167821 Fulltext: PDF;
In : 15th Pisa Meeting on Advanced Detectors, La Biodola - Isola D'elba, Italy, 22 - 28 May 2022, pp.167821

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2024-07-02
07:03
Digital cells radiation hardness study of TPSCo 65 nm CIS technology by designing a ring oscillator / Barbero, M (Marseille, CPPM) ; Barrillon, P (Marseille, CPPM) ; Fougeron, D (Marseille, CPPM) ; Habib, A (Marseille, CPPM) ; Pangaud, P (Marseille, CPPM)
The CPPM group has long been designing and testing HV-CMOS blocks to complete monolithic chips in various technologies (TJ180, LF150, AMS) in the framework of several collaborations. In 2020, we participated in the MLR1 run in TowerJazz 65 nm technology through CERN’s EP-R&D; WP1.2, by designing a ring oscillator test chip. [...]
2023 - 8 p. - Published in : JINST 18 (2023) C02063
In : Topical Workshop on Electronics for Particle Physics 2022 (TWEPP 2022), Bergen, Norway, 19 - 23 Sep 2022, pp.C02063

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2024-07-02
07:03
Single-event effects in SOI technologies and devices / Musseau, O (Saclay)
Due to their limited sensitive volumes for charge collection, silicon on insulator (SOI) technologies are good candidates for any microelectronic device operating in a space environment. While being insensitive to latchup phenomena, SOI devices may experience single-event effects (SEE's). [...]
1996 - 11 p. - Published in : IEEE Trans. Nucl. Sci. 43 (1996) 603-613

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2024-07-02
07:03
Design of a Radiation-Tolerant Bandgap Voltage Reference for HEP applications / Traversi, Gianluca (Bergamo U., Ingengneria Dept. ; INFN, Pavia) ; Gaioni, Luigi (Bergamo U., Ingengneria Dept. ; INFN, Pavia) ; Ballabriga, Rafael (CERN) ; Ceresa, Davide (CERN) ; Michelis, Stefano (CERN)
This work discusses the design of a bandgap voltage reference circuit to be operated in harsh radiation environments. [...]
2022. - 3 p.

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2024-07-02
07:03
Test bench of a 100 Gbps radiation hardened link for future particle accelerators / Martina, F (CERN) ; Baron, S (CERN) ; Moreira, P (CERN) ; Baszczyk, M (CERN) ; Biereigel, S (CERN) ; Klekotko, A (CERN ; Leuven U.) ; Kulis, S (CERN)
Pioneering physics experiments require increasingly faster data transfers and high-throughput electronics, which drives the research towards a new class of serialisers and optical links. In this framework, the DART28, a 100 Gbps radiation tolerant serialiser and driver, has been designed in 28 nm CMOS technology, submitted in April and delivered in August 2023. [...]
2024 - 7 p. - Published in : JINST 19 (2024) C02072 Fulltext: PDF;
In : Topical Workshop on Electronics for Particle Physics 2023 (TWEPP 2023), Geremeas, Sardinia, Italy, 1 - 6 Oct 2023, pp.C02072

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2024-07-02
07:03
Dual use driver for high speed links transmitters in the future high energy physics experiments / Baszczyk, M (CERN) ; Biereigel, S (CERN) ; Klekotko, A (CERN ; Leuven U.) ; Kulis, S (CERN) ; Martina, F (CERN) ; Moreira, P (CERN)
The paper presents the Dual Use Driver (DUDE) for highspeed links, a circuit designed for the Demonstrator ASIC for Radiation-Tolerant Transmitter in 28 nm CMOS (DART28) developed under the EP-R&D; programme on technologies for future high energyphysics experiments. The driver operates at 25.6 Gbps and it allows driving both 100 Ωtransmission lines and optical Ring Modulators (RMs) integrated in a photonics integrated circuit(PIC). [...]
2024 - 7 p. - Published in : JINST 19 (2024) C03013 Fulltext: PDF;
In : Topical Workshop on Electronics for Particle Physics 2023 (TWEPP 2023), Geremeas, Sardinia, Italy, 1 - 6 Oct 2023, pp.C03013

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