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2018-08-15
08:13
Radiation hardness of silicon—a challenge for defect engineering / Stahl, J (Hamburg U., Inst. Exp. Phys. II) ; Fretwurst, E (Hamburg U., Inst. Exp. Phys. II) ; Lindstroem, G (Hamburg U., Inst. Exp. Phys. II) ; Pintilie, I (Bucharest, Nat. Inst. Mat. Sci.)
Thermally stimulated current measurements of silicon particle detectors have been performed for defect characterization after high levels of $\gamma$- and proton-irradiation. Two defects closely correlated with the detector performance were monitored: a deep acceptor (I) and a bistable donor (BD). [...]
2003 - 5 p. - Published in : Physica B 340 (2003) 705-709
In : 22nd International Conference on Defects in Semiconductors, Aarhus, Denmark, 28 Jul - 1 Aug 2003, pp.705-709

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2018-08-15
08:13
Second-order generation of point defects in highly irradiated float zone silicon—annealing studies / Pintilie, I (Bucharest, Nat. Inst. Mat. Sci. ; Hamburg U., Inst. Exp. Phys. II) ; Fretwurst, E (Hamburg U., Inst. Exp. Phys. II) ; Kramberger, G (DESY) ; Lindstroem, G (Hamburg U., Inst. Exp. Phys. II) ; Li, Z (DESY) ; Stahl, J (Brookhaven Natl. Lab.)
Isothermal and isochronal annealing experiments have shown that the I defect (the main cause for the changes in silicon diodes characteristics after high levels of gamma-irradiation) is stable up to 325–350°C. Possible reactions, which can explain the behavior of different defects formed during the annealing experiments, are discussed. [...]
2003 - 5 p. - Published in : Physica B 340 (2003) 578-582
In : 22nd International Conference on Defects in Semiconductors, Aarhus, Denmark, 28 Jul - 1 Aug 2003, pp.578-582

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2018-08-15
08:13
High fluence effects on silicon detectors: An overview of the state of the art of radiation resistant detector characterisation by the CERN RD50 collaboration / Wonsak, Sven (U. Liverpool (main)) /RD50
The CERN RD50 collaboration has the aim to investigate radiation hard semiconductor devices for very high luminosity colliders. This is done by looking into four key aspects: Defect/material characterization, detector characterization, new structures and full detector systems. [...]
SISSA, 2017 - 10 p. - Published in : PoS Vertex2016 (2017) 032 Fulltext: PDF; External link: PoS server
In : VERTEX 2016, La Biodola, Italy, 25 - 30 Sep 2016, pp.032

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2018-08-15
08:13
A comprehensive numerical simulation of heavily irradiated p-type and n-type silicon detectors / Petasecca, Marco (Perugia U. ; INFN, Perugia) ; Moscatelli, Francesco (Perugia U. ; INFN, Perugia ; IMM, Bologna) ; Passeri, Daniele (Perugia U. ; INFN, Perugia) ; Pignatel, Giorgio Umberto (Perugia U. ; INFN, Perugia) ; Scarpello, Carlo (Perugia U.) ; Caprai, Giovanni (Perugia U.)
In the framework of the CERN-RD50 collaboration, the adoption of p-type substrates has been proposed as a suitable mean to improve the radiation hardness of silicon detectors up to fluences of $10^{16} \rm{n}/\rm{cm}^2$. In this work the simulated electrical characteristics of irradiated p-type and n-type detectors are reported, for comparison with experimental measurements collected from the literature. [...]
2005 - 4 p. - Published in : 10.1109/NSSMIC.2005.1596601

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2018-08-15
08:13
Radiation Hard Silicon Particle Detectors for Phase-II LHC Trackers / Oblakowska-Mucha, A (AGH-UST, Cracow) /RD50
The major LHC upgrade is planned after ten years of accelerator operation. It is foreseen to significantly increase the luminosity of the current machine up to $10^{35} \rm{cm}^{−2} s^{−1}$ and operate as the upcoming High Luminosity LHC (HL-LHC) . [...]
2017 - 11 p. - Published in : JINST 12 (2017) C02054
In : 14th Topical Seminar on Innovative Particle and Radiation Detectors , Siena, Italy, 3 - 6 Oct 2016, pp.C02054

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2018-08-15
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Radiation hard semiconductor devices for very high luminosity colliders / Baselga Bacardit, Marta (Barcelona, Inst. Microelectron.) /RD50
The next upgrades of the HL-LHC (High Luminosity-Large Hadron Collider) are scheduled to reach fluences of $2 \times 10^{16} \rm{n}_{eq} /cm^2$. Silicon detectors will be exposed to high fluences of radiation, and RD50 (Radiation Hard Semiconductor Devices For High Luminosity Colliders) is a CERN R&D; collaboration devoted to develop radiation hard silicon detectors for the HL-LHC. [...]
SISSA, 2015 - 10 p. - Published in : PoS VERTEX2015 (2015) 032 Fulltext: PDF; External link: PoS server
In : 24th International Workshop on Vertex Detectors, Santa Fe, NM, USA, 1 - 5 Jun 2015, pp.032

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2018-08-15
08:13
Development of 3D detectors for very high luminosity colliders / Fleta, Celeste (Glasgow U.) /CERN RD50
3D solid state detectors have very promising characteristics for particle trackers in harsh radiation environments such as the expected after the proposed luminosity upgrade of the large hadron collider at CERN. Different 3D technologies, including single- and double- type column and full 3D detectors, are being evaluated by the CERN RD50 collaboration. [...]
2007 - 6 p. IEEE Nucl.Sci.Symp.Conf.Rec. - Published in : 10.1109/NSSMIC.2007.4437169
In : Nuclear Science Symposium and Medical Imaging Conference, Honolulu, HI, USA, 27 Oct - 3 Nov 2007, pp.921-926

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2018-08-15
08:13
A portable readout system for microstrip silicon sensors (ALIBAVA) / Marco-Hernández, Ricardo (Valencia U., IFIC) /ALIBAVA
A readout system for microstrip silicon sensors has been developed as a result of a collaboration among the University of Liverpool, the CNM (Centro Nacional de Microelectrónica) of Barcelona and the IFIC (Instituto de Física Corpuscular) of Valencia. The name of this collaboration is ALIBAVA and it is integrated in the RD50 Collaboration. [...]
2008 - 8 p. - Published in : 10.1109/NSSMIC.2008.4775030
In : 2008 IEEE Nuclear Science Symposium, Medical Imaging Conference and 16th Room Temperature Semiconductor Detector Workshop, Dresden, Germany, 19 - 25 Oct 2008, pp.3201-3208

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2018-08-15
08:13
Totem Results on Elastic Scattering and Total Cross-section / Kašpar, Jan (Prague, Inst. Phys.) /TOTEM
TOTEM is an LHC experiment dedicated to forward hadronic physics. In this contribution, an update on two main parts of its physics programme is given: proton-proton elastic scattering and total cross-section..
2015 - 2 p. - Published in : 10.1142/9789814689304_0012
In : 30th International Workshop on High Energy Physics "Particle and Astroparticle Physics, Gravitation and Cosmology: Predictions, Observations and New Projects", IHEP, Protvino, Russia, 23 - 27 Jun 2014, pp.75-76

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2018-08-15
08:13
Modeling of electric field in silicon micro-strip detectors irradiated with neutrons and pions / Kramberger, G (Stefan Inst., Ljubljana) ; Cindro, V (Stefan Inst., Ljubljana) ; Mandić, I (Stefan Inst., Ljubljana) ; Mikuž, M (Stefan Inst., Ljubljana ; Ljubljana U.) ; Milovanović, M (Stefan Inst., Ljubljana) ; Zavrtanik, M (Stefan Inst., Ljubljana)
Edge-TCT method was used to extract velocity profiles in heavily irradiated silicon micro-strip detectors. Detectors were irradiated up to $10^{16} \rm{cm}^{-2}$ with reactor neutrons, 200 MeV pions and a combination of both. [...]
2014 - 19 p. - Published in : JINST 9 (2014) P10016 Fulltext: jinst14_10_p10016 - PDF; 10.1088_1748-0221_9_10_P10016 - PDF;

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